X-On Electronics has gained recognition as a prominent supplier of NSBC143EDXV6T1G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. NSBC143EDXV6T1G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

NSBC143EDXV6T1G ON Semiconductor

NSBC143EDXV6T1G electronic component of ON Semiconductor
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Part No.NSBC143EDXV6T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
Datasheet: NSBC143EDXV6T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.242 ea
Line Total: USD 0.24 
Availability - 28541
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
28541
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.242
10 : USD 0.1617
100 : USD 0.0858
1000 : USD 0.0682
4000 : USD 0.0649
8000 : USD 0.0561
24000 : USD 0.0561
48000 : USD 0.055
100000 : USD 0.0528

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Height
Length
Width
Brand
Pd - Power Dissipation
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NSBC143EDXV6T1G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSBC143EDXV6T1G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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MUN5232DW1, NSBC143EDXV6, NSBC143EDP6 Dual NPN Bias Resistor Transistors www.onsemi.com R1 = 4.7 k , R2 = 4.7 k PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R 1 device and its external resistor bias network. The Bias Resistor R 2 Transistor (BRT) contains a single transistor with a monolithic bias Q 1 network consisting of two resistors a series base resistor and a base-emitter resistor. The BRT eliminates these individual Q 2 components by integrating them into a single device. The use of a BRT R 2 R 1 can reduce both system cost and board space. Features (4) (5) (6) Simplifies Circuit Design Reduces Board Space MARKING DIAGRAMS Reduces Component Count 6 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT363 7J M AEC-Q101 Qualified and PPAP Capable CASE 419B02 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant MAXIMUM RATINGS SOT563 7J M (T = 25C, common for Q and Q , unless otherwise noted) A 1 2 CASE 463A 1 Rating Symbol Max Unit Collector-Base Voltage V 50 Vdc CBO Collector-Emitter Voltage V 50 Vdc CEO SOT963 T M Collector Current Continuous I 100 mAdc C CASE 527AD 1 Input Forward Voltage V 30 Vdc IN(fwd) Input Reverse Voltage V 10 Vdc IN(rev) 7J/T = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the M = Date Code* device. If any of these limits are exceeded, device functionality should not be = Pb-Free Package assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) ORDERING INFORMATION *Date Code orientation may vary depending Device Package Shipping upon manufacturing location. MUN5232DW1T1G, SOT363 3,000/Tape & Reel SMUN5232DW1T1G NSBC143EDXV6T1G SOT563 4,000/Tape & Reel NSBC143EDP6T5G SOT963 8,000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2012 55 Publication Order Number: June, 2017 Rev. 1 DTC143ED/DMUN5232DW1, NSBC143EDXV6, NSBC143EDP6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MUN5232DW1 (SOT 363) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 37) 187 mW A (Note 38) 256 Derate above 25C (Note 37) 1.5 mW/C (Note 38) 2.0 Thermal Resistance, (Note 37) R 670 C/W JA Junction to Ambient (Note 38) 490 MUN5232DW1 (SOT363) BOTH JUNCTION HEATED (Note 39) Total Device Dissipation P D T = 25C (Note 37) 250 mW A (Note 38) 385 Derate above 25C (Note 37) 2.0 mW/C (Note 38) 3.0 Thermal Resistance, R C/W JA Junction to Ambient (Note 37) 493 (Note 38) 325 Thermal Resistance, R C/W JL Junction to Lead (Note 37) 188 (Note 38) 208 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBC143EDXV6 (SOT563) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 37) 357 mW A Derate above 25C (Note 37) 2.9 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 37) 350 NSBC143EDXV6 (SOT563) BOTH JUNCTION HEATED (Note 39) Total Device Dissipation P D T = 25C (Note 37) 500 mW A Derate above 25C (Note 37) 4.0 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 37) 250 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBC143EDP6 (SOT963) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 40) 231 MW A (Note 41) 269 Derate above 25C (Note 40) 1.9 mW/C (Note 41) 2.2 Thermal Resistance, R C/W JA Junction to Ambient (Note 40) 540 (Note 41) 464 NSBC143EDP6 (SOT963) BOTH JUNCTION HEATED (Note 39) Total Device Dissipation P D T = 25C (Note 40) 339 MW A (Note 41) 408 Derate above 25C (Note 40) 2.7 mW/C (Note 41) 3.3 Thermal Resistance, R C/W JA Junction to Ambient (Note 40) 369 (Note 41) 306 Junction and Storage Temperature Range T , T 55 to +150 C J stg 37.FR4 Minimum Pad. 38.FR4 1.0 1.0 Inch Pad. 39.Both junction heated values assume total power is sum of two equally powered channels. 2 40.FR4 100 mm , 1 oz. copper traces, still air. 2 41.FR4 500 mm , 1 oz. copper traces, still air. www.onsemi.com 56

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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