MUN5316DW1, NSBC143TPDXV6 Complementary Bias Resistor Transistors R1 = 4.7 k , R2 = k www.onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias R 1 R 2 network consisting of two resistors a series base resistor and a Q 1 baseemitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT Q 2 can reduce both system cost and board space. R 2 R 1 Features S and NSV Prefix for Automotive and Other Applications (4) (5) (6) Requiring Unique Site and Control Change Requirements AEC-Q101 Qualified and PPAP Capable* Simplifies Circuit Design MARKING DIAGRAMS Reduces Board Space Reduces Component Count 6 SOT363 These Devices are PbFree, Halogen Free/BFR Free and are RoHS 16 M CASE 419B Compliant 1 MAXIMUM RATINGS (T = 25C both polarities Q1 (PNP) and Q2 (NPN), unless otherwise noted) A SOT563 Rating Symbol Max Unit 16 M CASE 463A CollectorBase Voltage V 50 Vdc CBO 1 CollectorEmitter Voltage V 50 Vdc CEO Collector Current Continuous I 100 mAdc C 16 = Specific Device Code M = Date Code* Input Forward Voltage V 30 Vdc IN(fwd) = PbFree Package Input Reverse Voltage V Vdc IN(rev) (Note: Microdot may be in either location) NPN 6 PNP 5 *Date Code orientation may vary depending up- on manufacturing location. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping MUN5316DW1T1G SOT363 3,000 / Tape & Reel NSVMUN5316DW1T1G* NSBC143TPDXV6T1G, SOT563 4,000 / Tape & Reel NSVBC143TPDXV6T1G* For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: March, 2016 Rev. 3 DTC143TP/DMUN5316DW1, NSBC143TPDXV6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MUN5316DW1 (SOT363) One Junction Heated Total Device Dissipation P D T = 25C (Note 1) 187 mW A (Note 2) 256 Derate above 25C (Note 1) 1.5 mW/C (Note 2) 2.0 Thermal Resistance, (Note 1) R 670 C/W JA Junction to Ambient (Note 2) 490 MUN5316DW1 (SOT363) Both Junction Heated (Note 3) Total Device Dissipation P D T = 25C (Note 1) 250 mW A (Note 2) 385 Derate above 25C (Note 1) 2.0 mW/C (Note 2) 3.0 Thermal Resistance, (Note 1) R 493 C/W JA Junction to Ambient (Note 2) 325 Thermal Resistance, (Note 1) R 188 C/W JL Junction to Lead (Note 2) 208 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBC143TPDXV6 (SOT563) One Junction Heated Total Device Dissipation P D T = 25C (Note 1) 357 mW A Derate above 25C (Note 1) 2.9 mW/C Thermal Resistance, C/W R JA Junction to Ambient (Note 1) 350 NSBC143TPDXV6 (SOT563) Both Junction Heated (Note 3) Total Device Dissipation P D T = 25C (Note 1) 500 mW A Derate above 25C (Note 1) 4.0 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 250 Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. FR4 Minimum Pad. 2. FR4 1.0 x 1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels. www.onsemi.com 2