Y Complementary Bias Resistor Transistors R1 = 4.7 k , R2 = 47 k NPN and PNP Transistors with Monolithic Bias Resistor Network MUN5333DW1, www.onsemi.com NSBC143ZPDXV6, NSBC143ZPDP6 PIN CONNECTIONS (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R Transistor (BRT) contains a single transistor with a monolithic bias 1 R 2 network consisting of two resistors a series base resistor and a Q 1 base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT Q 2 can reduce both system cost and board space. R 2 R 1 Features Simplifies Circuit Design (4) (5) (6) Reduces Board Space Reduces Component Count S and NSV Prefix for Automotive and Other Applications MARKING DIAGRAMS Requiring Unique Site and Control Change Requirements 6 AEC-Q101 Qualified and PPAP Capable* SOT363 33 M These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS CASE 419B02 Compliant 1 MAXIMUM RATINGS (T = 25C both polarities Q (PNP) & Q (NPN), unless otherwise noted) A 1 2 Rating Symbol Max Unit SOT563 33 M CASE 463A Collector-Base Voltage V 50 Vdc CBO 1 Collector-Emitter Voltage V 50 Vdc CEO Collector Current Continuous I 100 mAdc C Input Forward Voltage V 30 Vdc IN(fwd) SOT963 M Input Reverse Voltage V 5 Vdc CASE 527AD IN(rev) 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 33/Y = Specific Device Code M = Date Code* ORDERING INFORMATION = Pb-Free Package Device Package Shipping (Note: Microdot may be in either location) MUN5333DW1T1G, SOT363 3,000/Tape & Reel *Date Code orientation may vary depending NSVMUN5333DW1T1G* upon manufacturing location. NSVMUN5333DW1T3G* SOT363 10,000/Tape & Reel NSBC143ZPDXV6T1G SOT563 4,000/Tape & Reel NSVBC143ZPDXV6T1G* NSVBC143ZPDXV6T5G* SOT563 8,000/Tape & Reel NSBC143ZPDP6T5G SOT963 8,000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: April, 2021 Rev. 7 DTC143ZP/DMUN5333DW1, NSBC143ZPDXV6, NSBC143ZPDP6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MUN5333DW1 (SOT 363) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 1) 187 mW A (Note 2) 256 Derate above 25C (Note 1) 1.5 mW/C (Note 2) 2.0 Thermal Resistance, (Note 1) R 670 C/W JA Junction to Ambient (Note 2) 490 MUN5333DW1 (SOT363) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 1) 250 mW A (Note 2) 385 Derate above 25C (Note 1) 2.0 mW/C (Note 2) 3.0 Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 493 (Note 2) 325 Thermal Resistance, R C/W JL Junction to Lead (Note 1) 188 (Note 2) 208 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBC143ZPDXV6 (SOT563) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 1) 357 mW A Derate above 25C (Note 1) 2.9 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 350 NSBC143ZPDXV6 (SOT563) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 1) 500 mW A Derate above 25C (Note 1) 4.0 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 250 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBC143ZPDP6 (SOT963) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 4) 231 MW A (Note 5) 269 Derate above 25C (Note 4) 1.9 mW/C (Note 5) 2.2 Thermal Resistance, R C/W JA Junction to Ambient (Note 4) 540 (Note 5) 464 NSBC143ZPDP6 (SOT963) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 4) 339 MW A (Note 5) 408 Derate above 25C (Note 4) 2.7 mW/C (Note 5) 3.3 Thermal Resistance, R C/W JA Junction to Ambient (Note 4) 369 (Note 5) 306 Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. FR4 Minimum Pad. 2. FR4 1.0 1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels. 2 4. FR4 100 mm , 1 oz. copper traces, still air. 2 5. FR4 500 mm , 1 oz. copper traces, still air. www.onsemi.com 2