MUN5213DW1, NSBC144EDXV6, NSBC144EDP6 Dual NPN Bias Resistor Transistors www.onsemi.com R1 = 47 k , R2 = 47 k NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R 1 Transistor (BRT) contains a single transistor with a monolithic bias R 2 network consisting of two resistors a series base resistor and a Q 1 base-emitter resistor. The BRT eliminates these individual Q components by integrating them into a single device. The use of a BRT 2 can reduce both system cost and board space. R 2 R 1 Features Simplifies Circuit Design (4) (5) (6) Reduces Board Space Reduces Component Count MARKING DIAGRAMS S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 6 AEC-Q101 Qualified and PPAP Capable* SOT363 7C M These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS CASE 419B02 Compliant 1 MAXIMUM RATINGS (T = 25C, common for Q and Q , unless otherwise noted) A 1 2 SOT563 Rating Symbol Max Unit 7C M CASE 463A Collector-Base Voltage V 50 Vdc CBO 1 Collector-Emitter Voltage V 50 Vdc CEO Collector Current Continuous I 100 mAdc C Input Forward Voltage V 40 Vdc IN(fwd) SOT963 D M CASE 527AD Input Reverse Voltage V 10 Vdc IN(rev) 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be 7C/D = Specific Device Code assumed, damage may occur and reliability may be affected. M = Date Code* ORDERING INFORMATION = Pb-Free Package Device Package Shipping (Note: Microdot may be in either location) MUN5213DW1T1G, SOT363 3,000 / Tape & Reel *Date Code orientation may vary depending SMUN5213DW1T1G* upon manufacturing location. MUN5213DW1T3G, SOT363 10,000 / Tape & Reel NSVMUN5213DW1T3G* NSBC144EDXV6T1G SOT563 4,000 / Tape & Reel NSBC144EDXV6T5G SOT563 8,000 / Tape & Reel NSBC144EDP6T5G SOT963 8,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2017 19 Publication Order Number: June, 2017 Rev. 3 DTC144ED/DMUN5213DW1, NSBC144EDXV6, NSBC144EDP6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MUN5213DW1 (SOT 363) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 13) 187 mW A (Note 14) 256 Derate above 25C (Note 13) 1.5 mW/C (Note 14) 2.0 Thermal Resistance, (Note 13) R 670 C/W JA Junction to Ambient (Note 14) 490 MUN5213DW1 (SOT363) BOTH JUNCTION HEATED (Note 15) Total Device Dissipation P D T = 25C (Note 13) 250 mW A (Note 14) 385 Derate above 25C (Note 13) 2.0 mW/C (Note 14) 3.0 Thermal Resistance, R C/W JA Junction to Ambient (Note 13) 493 (Note 14) 325 Thermal Resistance, R C/W JL Junction to Lead (Note 13) 188 (Note 14) 208 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBC144EDXV6 (SOT563) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 13) 357 mW A Derate above 25C (Note 13) 2.9 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 13) 350 NSBC144EDXV6 (SOT563) BOTH JUNCTION HEATED (Note 15) Total Device Dissipation P D T = 25C (Note 13) 500 mW A Derate above 25C (Note 13) 4.0 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 13) 250 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBC144EDP6 (SOT963) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 16) 231 MW A (Note 17) 269 Derate above 25C (Note 16) 1.9 mW/C (Note 17) 2.2 Thermal Resistance, R C/W JA Junction to Ambient (Note 16) 540 (Note 17) 464 NSBC144EDP6 (SOT963) BOTH JUNCTION HEATED (Note 15) Total Device Dissipation P D T = 25C (Note 16) 339 MW A (Note 17) 408 Derate above 25C (Note 16) 2.7 mW/C (Note 17) 3.3 Thermal Resistance, R C/W JA Junction to Ambient (Note 16) 369 (Note 17) 306 Junction and Storage Temperature Range T , T 55 to +150 C J stg 13.FR4 Minimum Pad. 14.FR4 1.0 1.0 Inch Pad. 15.Both junction heated values assume total power is sum of two equally powered channels. 2 16.FR4 100 mm , 1 oz. copper traces, still air. 2 17.FR4 500 mm , 1 oz. copper traces, still air. www.onsemi.com 20