M NSD914F3T5G High-Speed Switching Diode The NSD914F3T5G device is a spinoff of our popular SOT23 three leaded device. It is designed for high speed switching applications and is housed in the SOT1123 surface mount package. www.onsemi.com This device is ideal for lowpower surface mount applications where board space is at a premium. Features 3 1 CATHODE ANODE Reduces Board Space This is a HalideFree Device NSD914F3T5G This is a PbFree Device MAXIMUM RATINGS 3 Rating Symbol Value Unit 2 Reverse Voltage V 100 Vdc 11 R Forward Current I 200 mAdc SOT1123 F CASE 524AA Peak Forward Surge Current I 500 mAdc FM(surge) STYLE 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MARKING DIAGRAM Total Device Dissipation, T = 25C P 290 mW A D Derate above 25C (Note 1) 2.3 mW/C Thermal Resistance, R 432 C/W JA JunctiontoAmbient (Note 1) R = Device Code Total Device Dissipation, T = 25C P 347 mW A D M = Date Code Derate above 25C (Note 2) 2.8 mW/C Thermal Resistance, R 360 C/W JA JunctiontoAmbient (Note 2) ORDERING INFORMATION Thermal Resistance, R 143 C/W JL Device Package Shipping JunctiontoLead 3 (Note 2) NSD914F3T5G SOT1123 8000/Tape & Reel Junction and Storage Temperature Range T , T 55 to C J stg +150 (PbFree) Stresses exceeding those listed in the Maximum Ratings table may damage the For information on tape and reel specifications, device. If any of these limits are exceeded, device functionality should not be including part orientation and tape sizes, please assumed, damage may occur and reliability may be affected. refer to our Tape and Reel Packaging Specifications 2 1. 100 mm 1 oz, copper traces. Brochure, BRD8011/D. 2 2. 500 mm 1 oz, copper traces. Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: January, 2019 Rev. 1 NSD914F3/D RNSD914F3T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage V 100 Vdc (BR) (I = 100 Adc) R Reverse Voltage Leakage Current I R (V = 20 Vdc) 25 nAdc R (V = 75 Vdc) 5.0 Adc R Diode Capacitance C 4.0 pF T (V = 0, f = 1.0 MHz) R Forward Voltage V 1.0 Vdc F (I = 10 mAdc) F Reverse Recovery Time t 4.0 ns rr (I = I = 10 mAdc) (Figure 1) F R 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. www.onsemi.com 2