NSTB60BDW1 PNP General Purpose and NPN Bias Resistor Transistor Combination Simplifies Circuit Design www.onsemi.com Reduces Board Space Reduces Component Count (3) (2) (1) Available in 8 mm, 7 inch/3000 Unit Tape and Reel ESD Rating Human Body Model: Class 1B Q ESD Rating Machine Model: Class B 2 NSV Prefix for Automotive and Other Applications Requiring Q 1 Unique Site and Control Change Requirements AECQ101 R 2 R 1 Qualified and PPAP Capable (4) (5) (6) These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 4 MAXIMUM RATINGS 5 (T = 25C unless otherwise noted, common for Q and Q ) 6 A 1 2 Rating Symbol Q Q Unit 3 1 2 2 1 Collector-Emitter Voltage V 50 50 Vdc CEO SOT363 Collector-Base Voltage V 50 50 Vdc CBO CASE 419B STYLE 1 EmitterBase Voltage V 6.0 5.0 Vdc EBO Collector Current Continuous I 150 150 mAdc C Stresses exceeding those listed in the Maximum Ratings table may damage the MARKING DIAGRAM device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 6 THERMAL CHARACTERISTICS 71 M Characteristic (One Junction Heated) Symbol Max Unit 1 Total Device Dissipation P 187 (Note 1) mW D 71 = Device Code T = 25C 256 (Note 2) A M = Date Code* Derate above 25C 1.5 (Note 1) mW/C = PbFree Package 2.0 (Note 2) (Note: Microdot may be in either location) Thermal Resistance R 670 (Note 1) C/W JA *Date Code orientation may vary depending Junction-to-Ambient 490 (Note 2) upon manufacturing location. Characteristic (Both Junctions Heated) Symbol Max Unit Total Device Dissipation P 250 (Note 1) mW D ORDERING INFORMATION T = 25C 385 (Note 2) A Device Package Shipping Derate above 25C 2.0 (Note 1) mW/C 3.0 (Note 2) NSTB60BDW1T1G SOT363 3000 / Tape & Thermal Resistance R 493 (Note 1) C/W (PbFree) Reel JA Junction-to-Ambient 325 (Note 2) NSVTB60BDW1T1G SOT363 3000 / Tape & Thermal Resistance R 188 (Note 1) C/W (PbFree) Reel JL Junction-to-Lead 208 (Note 2) For information on tape and reel specifications, Junction and Storage Temperature T , T 55 to +150 C J stg including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification 1. FR4 Minimum Pad Brochure, BRD8011/D. 2. FR4 1.0 x 1.0 inch Pad Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: March, 2015 Rev. 4 NSTB60BDW1T1/DNSTB60BDW1 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Q 1 Collector-Base Breakdown Voltage (I = 50 Adc, I = 0) V 50 Vdc C E (BR)CBO Collector-Emitter Breakdown Voltage V 50 Vdc (BR)CEO (I = 1.0 mAdc, I = 0) C B EmitterBase Breakdown Voltage (I = 50 Adc, I = 0) V 6.0 Vdc E E (BR)EBO CollectorBase Cutoff Current (V = 50 Vdc, I = 0) I 0.1 A CB E CBO EmitterBase Cutoff Current (V = 6.0 Vdc, I = 0) I 0.1 A EB B EBO Collector-Emitter Saturation Voltage V 0.5 Vdc CE(sat) (I = 50 mAdc, I = 5.0 mAdc) (Note 3) C B DC Current Gain (V = 10 V, I = 5.0 mA) (Note 3) h 120 560 CE C FE Transition Frequency f 140 MHz T (V = 12 Vdc, I = 2.0 mAdc, f = 100 MHz) CE C Output Capacitance (V = 12 Vdc, I = 0 Adc, f = 1.0 MHz) C 3.5 pF CB E OB Q 2 Collector-Base Breakdown Voltage (I = 50 A, I = 0) V 50 Vdc C E (BR)CBO Collector-Emitter Breakdown Voltage V 50 Vdc (BR)CEO (I = 1.0 mA, I = 0) (Note 3) C B CollectorBase Cutoff Current (V = 50 V, I = 0) I 100 nAdc CB E CBO CollectorEmitter Cutoff Current (V = 50 V, I = 0) I 500 nAdc CE B CEO EmitterBase Cutoff Current (V = 6.0 V, I = 0) I 0.13 mAdc EB C EBO Collector-Emitter Saturation Voltage V 0.25 Vdc CE(sat) (I = 10 mA, I = 5.0 mA) (Note 3) C B DC Current Gain (V = 10 V, I = 5.0 mA) (Note 3) h 80 CE C FE Output Voltage (on) (V = 5.0 V, V = 4.0 V, R = 1.0 k ) (Note 3) V 0.2 Vdc CC B L OL Output Voltage (off) (V = 5.0 V, V = 0.25 V, R = 1.0 k ) (Note 3) V 4.9 Vdc CC B L OH Input Resistor (Note 3) R1 15.4 22 28.6 k Resistor Ratio (Note 3) R2/R1 1.70 2.13 2.55 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% www.onsemi.com 2