NSV45020JZT1G ON Semiconductor

NSI45020JZ, NSV45020JZ LED Driver, Adjustable Constant Current Regulator 45 V, 20 mA The adjustable constant current regulator (CCR) is a simple, NSI45020JZ, NSV45020JZ MAXIMUM RATINGS (T = 25C unless otherwise noted) A Rating Symbol Value Unit AnodeCathode Voltage Vak Max 45 V Reverse Voltage V 500 mV R Operating and Storage Junction Temperature Range T , T 55 to +150 C J stg ESD Rating: Human Body Model ESD Class 2 Machine Model Class C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Steady State Current Vak = 7.5 V (Note 1) I 17 20 23 mA reg(SS) Voltage Overhead (Note 2) V 1.8 V overhead Pulse Current Vak = 7.5 V (Note 3) I 17.15 23.4 mA reg(P) Capacitance Vak = 7.5 V (Note 4) C 7.4 pF Capacitance Vak = 0 V (Note 4) C 31 pF 2 1. I steady state is the voltage (Vak) applied for a time duration 35 sec, using FR4 300 mm 2 oz. Copper traces, in still air. reg(SS) 2. V = V V . V is typical value for 80% I . overhead in LEDs overhead reg(SS) 3. I nonrepetitive pulse test. Pulse width t 1.0 msec. reg(P) 4. f = 1 MHz, 0.02 V RMS. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation (Note 5) T = 25C P 1008 mW A D Derate above 25C 8.06 mW/C Thermal Resistance, JunctiontoAmbient (Note 5) R 124 C/W JA Thermal Reference, JunctiontoLead 4 (Note 5) 33.3 C/W R JL4 Total Device Dissipation (Note 6) T = 25C P 1136 mW A D Derate above 25C 9.09 mW/C Thermal Resistance, JunctiontoAmbient (Note 6) R 110 C/W JA Thermal Reference, JunctiontoLead 4 (Note 6) 33.3 C/W R JL4 Total Device Dissipation (Note 7) T = 25C P 1238 mW A D Derate above 25C 9.9 mW/C Thermal Resistance, JunctiontoAmbient (Note 7) R 101 C/W JA Thermal Reference, JunctiontoLead 4 (Note 7) 33.7 C/W R JL4 Total Device Dissipation (Note 8) T = 25C P 1420 mW A D Derate above 25C 11.36 mW/C Thermal Resistance, JunctiontoAmbient (Note 8) R 88 C/W JA Thermal Reference, JunctiontoLead 4 (Note 8) 32.1 C/W R JL4 Total Device Dissipation (Note 9) T = 25C P 1316 mW A D Derate above 25C 10.53 mW/C Thermal Resistance, JunctiontoAmbient (Note 9) R 95 C/W JA Thermal Reference, JunctiontoLead 4 (Note 9) 32.4 C/W R JL4 Total Device Dissipation (Note 10) T = 25C P 1506 mW A D Derate above 25C 12.05 mW/C Thermal Resistance, JunctiontoAmbient (Note 10) R 83 C/W JA Thermal Reference, JunctiontoLead 4 (Note 10) 30.8 C/W R JL4 Junction and Storage Temperature Range T , T 55 to +150 C J stg NOTE: Lead measurements are made by non contact methods such as IR with treated surface to increase emissivity to 0.9. Lead temperature measurement by attaching a T/C may yield values as high as 30% higher C/W values based upon empirical measurements and method of attachment. 2 5. FR4 300 mm , 1 oz. copper traces, still air. 2 6. FR4 300 mm , 2 oz. copper traces, still air. 2 7. FR4 500 mm , 1 oz. copper traces, still air. 2 8. FR4 500 mm , 2 oz. copper traces, still air. 2 9. FR4 700 mm , 1 oz. copper traces, still air. 2 10.FR4 700 mm , 2 oz. copper traces, still air.