Adjustable Constant Current Regulator & LED Driver 45 V, 35 70 mA 15%, 1.5 W Package NSI45035JZ, NSV45035JZ The adjustable constant current regulator (CCR) is a simple, economical and robust device designed to provide a cost effective www.onsemi.com solution for regulating current in LEDs (similar to Constant Current Diode, CCD). The CCR is based on Self-Biased Transistor (SBT) I = 35 70 mA reg(SS) technology and regulates current over a wide voltage range. It is Vak = 7.5 V designed with a negative temperature coefficient to protect LEDs from thermal runaway at extreme voltages and currents. Anode The CCR turns on immediately and is at 20% of regulation with 1 only 0.5 V Vak. The R pin allows I to be adjusted to higher adj reg(SS) currents by attaching a resistor between R (Pin 3) and the Cathode adj (Pin 4). The R pin can also be left open (No Connect) if no adj 3 adjustment is required. It requires no external components allowing it R adj to be designed as a high or lowside regulator. The high anode- cathode voltage rating withstands surges common in Automotive, 2/4 Industrial and Commercial Signage applications. This device is Cathode available in a thermally robust package and is qualified to stringent AECQ101 standard, which is lead-free RoHS compliant and uses halogen-free molding compound, and UL94V0 certified. SOT223 CASE 318E Features STYLE 2 Robust Power Package: 1.5 Watts Adjustable up to 70 mA MARKING DIAGRAM Wide Operating Voltage Range C Immediate Turn-On Voltage Surge Suppressing Protecting LEDs AYW AAK AEC-Q101 Qualified and PPAP Capable, UL94V0 Certified SBT (SelfBiased Transistor) Technology 1 Negative Temperature Coefficient A C R adj Eliminates Additional Regulation A = Assembly Location NSV Prefix for Automotive and Other Applications Requiring Y = Year Unique Site and Control Change Requirements AECQ101 W = Work Week Qualified and PPAP Capable AAK = Specific Device Code = PbFree Package These Devices are PbFree, Halogen Free/BFR Free and are RoHS (Note: Microdot may be in either location) Compliant Applications ORDERING INFORMATION Automobile: Chevron Side Mirror Markers, Cluster, Display & Device Package Shipping Instrument Backlighting, CHMSL, Map Light NSI45035JZT1G SOT223 1000/Tape & Reel AC Lighting Panels, Display Signage, Decorative Lighting, Channel (PbFree) Lettering NSV45035JZT1G SOT223 1000/Tape & Reel Switch Contact Wetting (PbFree) Application Note AND8391/D Power Dissipation Considerations NSV45035JZT3G SOT223 4000/Tape & Reel Application Note AND8349/D Automotive CHMSL (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: December, 2020 Rev. 3 NSI45035JZ/DNSI45035JZ, NSV45035JZ MAXIMUM RATINGS (T = 25C unless otherwise noted) A Rating Symbol Value Unit AnodeCathode Voltage Vak Max 45 V Reverse Voltage V 500 mV R Operating and Storage Junction Temperature Range T , T 55 to +150 C J stg ESD Rating: Human Body Model ESD Class 2 Machine Model Class C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Steady State Current Vak = 7.5 V (Note 1) I 29.75 35 40.25 mA reg(SS) Voltage Overhead (Note 2) V 1.8 V overhead Pulse Current Vak = 7.5 V (Note 3) I 30.9 42.5 mA reg(P) Capacitance Vak = 7.5 V (Note 4) C 7.4 pF Capacitance Vak = 0 V (Note 4) C 31 pF 2 1. I steady state is the voltage (Vak) applied for a time duration 35 sec, using FR4 300 mm 2 oz. Copper traces, in still air. reg(SS) 2. V = V V . V is typical value for 75% I . overhead in LEDs overhead reg(SS) 3. I nonrepetitive pulse test. Pulse width t 1.0 msec. reg(P) 4. f = 1 MHz, 0.02 V RMS. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation (Note 5) T = 25C P 1008 mW A D Derate above 25C 8.06 mW/C Thermal Resistance, JunctiontoAmbient (Note 5) R 124 C/W JA Thermal Reference, JunctiontoLead 4 (Note 5) 33.3 C/W R JL4 Total Device Dissipation (Note 6) T = 25C P 1136 mW A D Derate above 25C 9.09 mW/C Thermal Resistance, JunctiontoAmbient (Note 6) R 110 C/W JA Thermal Reference, JunctiontoLead 4 (Note 6) 33.3 C/W R JL4 Total Device Dissipation (Note 7) T = 25C P 1238 mW A D Derate above 25C 9.9 mW/C Thermal Resistance, JunctiontoAmbient (Note 7) R 101 C/W JA Thermal Reference, JunctiontoLead 4 (Note 7) 33.7 C/W R JL4 Total Device Dissipation (Note 8) T = 25C P 1420 mW A D Derate above 25C 11.36 mW/C Thermal Resistance, JunctiontoAmbient (Note 8) R 88 C/W JA Thermal Reference, JunctiontoLead 4 (Note 8) 32.1 C/W R JL4 Total Device Dissipation (Note 9) T = 25C P 1316 mW A D Derate above 25C 10.53 mW/C Thermal Resistance, JunctiontoAmbient (Note 9) R 95 C/W JA Thermal Reference, JunctiontoLead 4 (Note 9) 32.4 C/W R JL4 Total Device Dissipation (Note 10) T = 25C P 1506 mW A D Derate above 25C 12.05 mW/C Thermal Resistance, JunctiontoAmbient (Note 10) R 83 C/W JA Thermal Reference, JunctiontoLead 4 (Note 10) 30.8 C/W R JL4 Junction and Storage Temperature Range T , T 55 to +150 C J stg NOTE: Lead measurements are made by non contact methods such as IR with treated surface to increase emissivity to 0.9. Lead temperature measurement by attaching a T/C may yield values as high as 30% higher C/W values based upon empirical measurements and method of attachment. 2 5. FR4 300 mm , 1 oz. copper traces, still air. 2 6. FR4 300 mm , 2 oz. copper traces, still air. 2 7. FR4 500 mm , 1 oz. copper traces, still air. 2 8. FR4 500 mm , 2 oz. copper traces, still air. 2 9. FR4 700 mm , 1 oz. copper traces, still air. 2 10.FR4 700 mm , 2 oz. copper traces, still air. www.onsemi.com 2