NSS60101DMT Low V NPN CE(sat) Transistors, 60 V, 1 A 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These CE(sat) www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DCDC converters and LED lightning, 60 Volt, 1 Amp power managementetc. In the automotive industry they can be used NPN Low V Transistors CE(sat) in air bag deployment and in the instrument cluster. The high current 2 gain allows e PowerEdge devices to be driven directly from PMUs MARKING control outputs, and the Linear Gain (Beta) makes them ideal DIAGRAM components in analog amplifiers. 1 6 WDFN6 Features AN M 2 5 CASE 506AN 3 4 NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirements AECQ101 AN = Specific Device Code Qualified and PPAP Capable M = Date Code = PbFree Package NSV60101DMTWTBG Wettable Flanks Device (Note: Microdot may be in either location) These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant PIN CONNECTIONS MAXIMUM RATINGS (T = 25C) A Rating Symbol Max Unit 6 1 7 CollectorEmitter Voltage V 60 Vdc CEO 5 2 CollectorBase Voltage V 60 Vdc CBO EmitterBase Voltage V 6 Vdc 8 EBO 4 3 Collector Current Continuous I 1 A C Collector Current Peak I 2 A CM 6,7 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 5 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance JunctiontoAmbient R 55 C/W JA (Notes 1 and 2) 4 3,8 Total Power Dissipation per Package P 2.27 W D T = 25C (Note 2) A ORDERING INFORMATION Thermal Resistance JunctiontoAmbient R 69 C/W JA (Note 3) Device Package Shipping Power Dissipation per Transistor T = 25C P 1.8 W NSS60101DMTTBG WDFN6 3000/Tape & A D (Note 3) (PbFree) Reel NSV60101DMTWTBG WDFN6 3000/Tape & Junction and Storage Temperature Range T , T 55 to C J stg +150 (PbFree) Reel 2 1. Per JESD517 with 100 mm pad area and 2 oz. Cu (Dual Operation). For information on tape and reel specifications, 2. P per Transistor when both are turned on is one half of Total P or 1.13 Watts. including part orientation and tape sizes, please D D 2 3. Per JESD517 with 100 mm pad area and 2 oz. Cu (SingleOperation). refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2016 Rev. 2 NSS60101DMT/DNSS60101DMT Table 1. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (I = 10 mA, I = 0) V 60 V C B (BR)CEO CollectorBase Breakdown Voltage (Ic = 0.1 mA, I = 0) V 80 V E (BR)CBO EmitterBase Breakdown Voltage (I = 0.1 mA, I = 0) V 6 V E C (BR)EBO Collector Cutoff Current (V = 60 V, I = 0) I 100 nA CB E CBO Emitter Cutoff Current (V = 5.0 V) I 100 nA BE EBO ON CHARACTERISTICS DC Current Gain (Note 4) h FE (I = 100 mA, V = 2.0 V) 150 250 C CE (I = 500 mA, V = 2.0 V) 120 240 C CE (I = 1 A, V = 2.0 V) 90 180 C CE (I = 2 A, V = 2.0 V 35 55 C CE CollectorEmitter Saturation Voltage (Note 4) V V CE(sat) (I = 500 mA, I = 50 mA) 0.063 0.100 C B (I = 1 A, I = 50 mA) 0.130 0.200 C B (I = 1 A, I = 100 mA) 0.115 0.180 C B Base Emitter Saturation Voltage (Note 4) V V BE(sat) (I = 500 mA, I = 50 mA) 1.0 C B (I = 1 A, I = 50 mA) 1.0 C B (I = 1 A, I = 100 mA) 1.1 C B BaseEmitter Turnon Voltage (Note 4) V 0.9 V BE(on) (I = 500 mA, V = 2 V) C CE DYNAMIC CHARACTERISTICS Output Capacitance C 10 pF obo (V = 10 V, f = 1.0 MHz) CB Cutoff Frequency f 180 MHz T (I = 50 mA, V = 2.0 V, f = 100 MHz) C CE SWITCHING TIMES Delay Time (V = 10 V, I = 0.5 A, I = 25 mA, I = 25 mA) t 13 ns CC C B1 B2 d Rise Time (V = 10 V, I = 0.5 A, I = 25 mA, I = 25 mA) t 18 ns CC C B1 B2 r Storage Time (V = 10 V, I = 0.5 A, I = 25 mA, I = 25 mA) t 700 ns CC C B1 B2 s Fall Time (V = 10 V, I = 0.5 A, I = 25 mA, I = 25 mA) t 80 ns CC C B1 B2 f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Condition: Pulse Width = 300 sec, Duty Cycle 2% www.onsemi.com 2