NSS60201LT1G Low V Transistor, CE(sat) NPN, 60 V, 4.0 A 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These CE(sat) are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. www.onsemi.com Typical applications are DCDC converters and power management in portable and battery powered products such as cellular and cordless 60 VOLTS, 4.0 AMPS phones, PDAs, computers, printers, digital cameras and MP3 players. NPN LOW V TRANSISTOR Other applications are low voltage motor controls in mass storage CE(sat) EQUIVALENT R 70 m products such as disc drives and tape drives. In the automotive DS(on) industry they can be used in air bag deployment and in the instrument 2 COLLECTOR cluster. The high current gain allows e PowerEdge devices to be 3 driven directly from PMUs control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. 1 NSV Prefix for Automotive and Other Applications Requiring BASE Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 2 These Devices are PbFree, Halogen Free/BFR Free and are RoHS EMITTER Compliant 3 MAXIMUM RATINGS (T = 25C) A Rating Symbol Max Unit 1 Collector-Emitter Voltage V 60 Vdc CEO 2 Collector-Base Voltage V 140 Vdc CBO SOT23 (TO236) Emitter-Base Voltage V 8.0 Vdc EBO CASE 318 STYLE 6 Collector Current Continuous I 2.0 A C Collector Current Peak I 4.0 A CM MARKING DIAGRAM Electrostatic Discharge ESD HBM Class 3B MM Class C VJ M THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 1 Total Device Dissipation P (Note 1) 460 mW D VJ = Specific Device Code T = 25C A M = Date Code* Derate above 25C 3.7 mW/C = PbFree Package Thermal Resistance, R (Note 1) 270 C/W JA (Note: Microdot may be in either location) JunctiontoAmbient *Date Code orientation and/or overbar may Total Device Dissipation P (Note 2) 540 mW D vary depending upon manufacturing location. T = 25C A Derate above 25C 4.3 mW/C Thermal Resistance, R (Note 2) 230 C/W JA ORDERING INFORMATION JunctiontoAmbient Device Package Shipping Total Device Dissipation P 710 mW Dsingle (Single Pulse < 10 sec.) (Note 3) NSS60201LT1G SOT23 3000/Tape & Reel Junction and Storage T , T 55 to C (PbFree) J stg Temperature Range +150 NSV60201LT1G SOT23 3000/Tape & Reel Stresses exceeding those listed in the Maximum Ratings table may damage the (PbFree) device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. For information on tape and reel specifications, 2 1. FR4 100 mm , 1 oz. copper traces. including part orientation and tape sizes, please 2 2. FR4 500 mm , 1 oz. copper traces. refer to our Tape and Reel Packaging Specification 3. Thermal response. Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: December, 2018 Rev. 4 NSS60201L/DNSS60201LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mAdc, I = 0) 60 C B Collector Base Breakdown Voltage V Vdc (BR)CBO (I = 0.1 mAdc, I = 0) 140 C E Emitter Base Breakdown Voltage V Vdc (BR)EBO (I = 0.1 mAdc, I = 0) 8.0 E C Collector Cutoff Current I Adc CBO (V = 60 Vdc, I = 0) 0.1 CB E Emitter Cutoff Current I Adc EBO (V = 6.0 Vdc) 0.1 EB ON CHARACTERISTICS DC Current Gain (Note 4) h FE (I = 10 mA, V = 2.0 V) 160 C CE (I = 500 mA, V = 2.0 V) 160 C CE (I = 1.0 A, V = 2.0 V) 150 350 C CE (I = 2.0 A, V = 2.0 V) 100 C CE Collector Emitter Saturation Voltage (Note 4) V V CE(sat) (I = 0.1 A, I = 0.010 A) 0.020 C B (I = 1.0 A, I = 0.100 A) 0.075 C B (I = 2.0 A, I = 0.200 A) 0.140 C B Base Emitter Saturation Voltage (Note 4) V V BE(sat) (I = 1.0 A, I = 10 mA) 0.790 0.900 C B Base Emitter Turnon Voltage (Note 4) V V BE(on) (I = 1.0 A, V = 2.0 V) 0.760 0.900 C CE Cutoff Frequency f MHz T (I = 100 mA, V = 5.0 V, f = 100 MHz) 100 C CE Input Capacitance (V = 0.5 V, f = 1.0 MHz) Cibo 380 pF EB Output Capacitance (V = 3.0 V, f = 1.0 MHz) Cobo 45 pF CB SWITCHING CHARACTERISTICS Delay (V = 30 V, I = 750 mA, I = 15 mA) t 55 ns CC C B1 d Rise (V = 30 V, I = 750 mA, I = 15 mA) t 100 ns CC C B1 r Storage (V = 30 V, I = 750 mA, I = 15 mA) t 1100 ns CC C B1 s Fall (V = 30 V, I = 750 mA, I = 15 mA) t 120 ns CC C B1 f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. www.onsemi.com 2