NSS60100DMT 60 V, 1 A, Low V PNP CE(sat) Transistors 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These CE(sat) www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DCDC converters and LED lightning, 60 Volt, 1 Amp power managementetc. In the automotive industry they can be used PNP Low V Transistors CE(sat) in air bag deployment and in the instrument cluster. The high current 2 gain allows e PowerEdge devices to be driven directly from PMUs control outputs, and the Linear Gain (Beta) makes them ideal MARKING components in analog amplifiers. DIAGRAM Features 1 6 WDFN6 AP M 2 5 NSV Prefix for Automotive and Other Applications Requiring CASE 506AN 3 4 1 Unique Site and Control Change Requirements AECQ101 AP = Specific Device Code Qualified and PPAP Capable M = Date Code NSV60100DMTWTBG Wettable Flanks Device = PbFree Package These Devices are PbFree, Halogen Free/BFR Free and are RoHS (Note: Microdot may be in either location) Compliant PIN CONNECTIONS MAXIMUM RATINGS (T = 25C) A Rating Symbol Max Unit 6 1 7 CollectorEmitter Voltage V 60 Vdc CEO CollectorBase Voltage V 60 Vdc CBO 5 2 EmitterBase Voltage V 6 Vdc EBO 8 4 3 Collector Current Continuous I 1 A C Collector Current Peak I 2 A CM Stresses exceeding those listed in the Maximum Ratings table may damage the 6,7 1 device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS 5 2 Characteristic Symbol Max Unit Thermal Resistance JunctiontoAmbient R 55 C/W JA (Notes 1 and 2) 4 3,8 Total Power Dissipation per Package P 2.27 W D T = 25C (Note 2) A ORDERING INFORMATION Thermal Resistance JunctiontoAmbient R 69 C/W JA (Note 3) Device Package Shipping Power Dissipation per Transistor T = 25C P 1.8 W A D NSS60100DMTTBG WDFN6 3000/Tape & (Note 3) (PbFree) Reel Junction and Storage Temperature Range T , T 55 to C J stg NSV60100DMTWTBG WDFN6 3000/Tape & +150 (PbFree) Reel 2 1. Per JESD517 with 100 mm pad area and 2 oz. Cu (Dual Operation). For information on tape and reel specifications, 2. P per Transistor when both are turned on is one half of Total P or 1.13 Watts. D D 2 including part orientation and tape sizes, please 3. Per JESD517 with 100 mm pad area and 2 oz. Cu (SingleOperation). refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2016 Rev. 2 NSS60100DMT/DNSS60100DMT Table 1. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (I = 10 mA, I = 0) V 60 V C B (BR)CEO CollectorBase Breakdown Voltage (Ic = 0.1 mA, I = 0) V 80 V E (BR)CBO EmitterBase Breakdown Voltage (I = 0.1 mA, I = 0) V 6 V E C (BR)EBO Collector Cutoff Current (V = 60 V, I = 0) I 100 nA CB E CBO Emitter Cutoff Current (V = 5.0 V) I 100 nA BE EBO ON CHARACTERISTICS DC Current Gain (Note 4) h FE (I = 100 mA, V = 2.0 V) 150 230 C CE (I = 500 mA, V = 2.0 V) 120 180 C CE (I = 1 A, V = 2.0 V) 90 140 C CE (I = 2 A, V = 2.0 V 40 80 C CE CollectorEmitter Saturation Voltage (Note 4) V V CE(sat) (I = 500 mA, I = 50 mA) 0.115 0.160 C B (I = 1 A, I = 50 mA) 0.250 0.350 C B (I = 1 A, I = 100 mA) 0.200 0.300 C B Base Emitter Saturation Voltage (Note 4) V V BE(sat) (I = 500 mA, I = 50 mA) 1.0 C B (I = 1 A, I = 50 mA) 1.0 C B (I = 1 A, I = 100 mA) 1.1 C B BaseEmitter Turnon Voltage (Note 4) V 0.9 V BE(on) (I = 500 mA, I = 50 mA) C B DYNAMIC CHARACTERISTICS Output Capacitance C 18 pF obo (V = 10 V, f = 1.0 MHz) CB Cutoff Frequency f 155 MHz T (I = 50 mA, V = 2.0 V, f = 100 MHz) C CE SWITCHING TIMES Delay Time (V = 10 V, I = 0.5 A, I = 25 mA, I = 25 mA) t 15 ns CC C B1 B2 d Rise Time (V = 10 V, I = 0.5 A, I = 25 mA, I = 25 mA) t 13 ns CC C B1 B2 r Storage Time (V = 10 V, I = 0.5 A, I = 25 mA, I = 25 mA) t 360 ns CC C B1 B2 s Fall Time (V = 10 V, I = 0.5 A, I = 25 mA, I = 25 mA) t 22 ns CC C B1 B2 f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Condition: Pulse Width = 300 sec, Duty Cycle 2% www.onsemi.com 2