NSS60200L 60 V, 4.0 A, Low V CE(sat) PNP Transistor 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These CE(sat) www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. 60 VOLTS, 4.0 AMPS Typical applications are DCDC converters and power management PNP LOW V TRANSISTOR in portable and battery powered products such as cellular and cordless CE(sat) phones, PDAs, computers, printers, digital cameras and MP3 players. EQUIVALENT R 80 m DS(on) Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive COLLECTOR 3 industry they can be used in air bag deployment and in the instrument 2 cluster. The high current gain allows e PowerEdge devices to be driven directly from PMUs control outputs, and the Linear Gain 1 BASE (Beta) makes them ideal components in analog amplifiers. Features 2 NSV Prefix for Automotive and Other Applications Requiring EMITTER Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 MAXIMUM RATINGS (T = 25C) A 2 SOT23 (TO236) Rating Symbol Max Unit CASE 318 Collector-Emitter Voltage V 60 Vdc CEO STYLE 6 Collector-Base Voltage V 80 Vdc CBO MARKING DIAGRAM Emitter-Base Voltage V 7.0 Vdc EBO Collector Current Continuous I 2.0 A C Collector Current Peak I 4.0 A CM VG M THERMAL CHARACTERISTICS 1 Characteristic Symbol Max Unit VG = Specific Device Code Total Device Dissipation P (Note 1) 460 mW D M = Date Code* T = 25C A = PbFree Package Derate above 25C 3.7 mW/C (Note: Microdot may be in either location) *Date Code orientation and/or overbar may Thermal Resistance, R (Note 1) 270 C/W JA vary depending upon manufacturing location. JunctiontoAmbient Total Device Dissipation P (Note 2) 540 mW D T = 25C A ORDERING INFORMATION Derate above 25C 4.3 mW/C Thermal Resistance, R (Note 2) 230 C/W Device Package Shipping JA JunctiontoAmbient NSS60200LT1G SOT23 3000/Tape & Reel (PbFree) Junction and Storage T , T 55 to C J stg Temperature Range +150 NSV60200LT1G SOT23 3000/Tape & Reel Stresses exceeding those listed in the Maximum Ratings table may damage the (PbFree) device. If any of these limits are exceeded, device functionality should not be For information on tape and reel specifications, assumed, damage may occur and reliability may be affected. 2 including part orientation and tape sizes, please 1. FR4 100 mm , 1 oz. copper traces. 2 refer to our Tape and Reel Packaging Specification 2. FR4 500 mm , 1 oz. copper traces. Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: October, 2016 Rev. 3 NSS60200L/DNSS60200L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mAdc, I = 0) 60 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 0.1 mAdc, I = 0) 80 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 0.1 mAdc, I = 0) 7.0 E C Collector Cutoff Current I Adc CBO (V = 60 Vdc, I = 0) 0.1 CB E Emitter Cutoff Current I Adc EBO (V = 6.0 Vdc) 0.1 EB ON CHARACTERISTICS DC Current Gain (Note 3) h FE (I = 10 mA, V = 2.0 V) 150 C CE (I = 500 mA, V = 2.0 V) 150 300 C CE (I = 1.0 A, V = 2.0 V) 100 C CE (I = 2.0 A, V = 2.0 V) 100 C CE CollectorEmitter Saturation Voltage (Note 3) V V CE(sat) (I = 0.1 A, I = 0.010 A) 0.017 0.030 C B (I = 1.0 A, I = 0.100 A) 0.095 0.120 C B (I = 1.0 A, I = 0.010 A) 0.180 0.270 C B (I = 2.0 A, I = 0.200 A) 0.170 0.220 C B BaseEmitter Saturation Voltage (Note 3) V V BE(sat) (I = 1.0 A, I = 0.010 A) 0.900 C B BaseEmitter Turnon Voltage (Note 3) V V BE(on) (I = 1.0 A, V = 2.0 V) 0.850 C CE Cutoff Frequency f MHz T (I = 100 mA, V = 5.0 V, f = 100 MHz) 100 C CE Input Capacitance (V = 0.5 V, f = 1.0 MHz) Cibo 325 pF EB Output Capacitance (V = 3.0 V, f = 1.0 MHz) Cobo 62 pF CB SWITCHING CHARACTERISTICS Delay (V = 30 V, I = 750 mA, I = 15 mA) t 60 ns CC C B1 d Rise (V = 30 V, I = 750 mA, I = 15 mA) t 120 ns CC C B1 r Storage (V = 30 V, I = 750 mA, I = 15 mA) t 400 ns CC C B1 s Fall (V = 30 V, I = 750 mA, I = 15 mA) t 130 ns CC C B1 f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. www.onsemi.com 2