NSVBCP69T1G ON Semiconductor

BCP69T1G, NSVBCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT 223 package, which is designed for medium power surface BCP69T1G, NSVBCP69T1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (I = 100 Adc, I = 0) V 25 Vdc C E (BR)CES CollectorEmitter Breakdown Voltage (I = 1.0 mAdc, I = 0) V 20 Vdc C B (BR)CEO EmitterBase Breakdown Voltage (I = 10 Adc, I = 0) V 5.0 Vdc E C (BR)EBO CollectorBase Cutoff Current (V = 25 Vdc, I = 0) I 10 Adc CB E CBO EmitterBase Cutoff Current (V = 5.0 Vdc, I = 0) I 10 Adc EB C EBO ON CHARACTERISTICS DC Current Gain h FE (I = 5.0 mAdc, V = 10 Vdc) 50 C CE (I = 500 mAdc, V = 1.0 Vdc) 85 375 C CE (I = 1.0 Adc, V = 1.0 Vdc) 60 C CE CollectorEmitter Saturation Voltage (I = 1.0 Adc, I = 100 mAdc) V 0.5 Vdc C B CE(sat) BaseEmitter On Voltage (I = 1.0 Adc, V = 1.0 Vdc) V 1.0 Vdc C CE BE(on) DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f 60 MHz T (I = 10 mAdc, V = 5.0 Vdc) C CE TYPICAL ELECTRICAL CHARACTERISTICS 400 300 V = 1 V CE 150C 200 300 25C 100 200 V = -10 V CE T = 25C 70 J 55C f = 30 MHz 100 50 0 30 -10 -100 -1000 0.001 0.01 0.1 1 10 I , COLLECTOR CURRENT (mA) C I , COLLECTOR CURRENT (A) C Figure 1. DC Current Gain Figure 2. Current Gain Bandwidth Product