X-On Electronics has gained recognition as a prominent supplier of NSVDTC123EM3T5G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. NSVDTC123EM3T5G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

NSVDTC123EM3T5G ON Semiconductor

NSVDTC123EM3T5G electronic component of ON Semiconductor
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Part No.NSVDTC123EM3T5G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased SOT723 BIAS RESISTOR
Datasheet: NSVDTC123EM3T5G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1859 ea
Line Total: USD 0.19 
Availability - 2554
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2554
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1859
10 : USD 0.1287
100 : USD 0.0671
1000 : USD 0.0561
8000 : USD 0.044
24000 : USD 0.0418
48000 : USD 0.0396
96000 : USD 0.0385

   
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We are delighted to provide the NSVDTC123EM3T5G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSVDTC123EM3T5G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3 Digital Transistors (BRT) R1 = 2.2 k , R2 = 2.2 k www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) contains a single transistor with a monolithic bias BASE network consisting of two resistors a series base resistor and a base (INPUT) R2 emitter resistor. The BRT eliminates these individual components by PIN 2 integrating them into a single device. The use of a BRT can reduce EMITTER both system cost and board space. (GROUND) Features MARKING DIAGRAMS Simplifies Circuit Design Reduces Board Space SC59 Reduces Component Count XX M CASE 318D NSV Prefix for Automotive and Other Applications Requiring STYLE 1 Unique Site and Control Change Requirements AEC-Q101 Qualified 1 and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS SOT23 Compliant XXX M CASE 318 STYLE 6 MAXIMUM RATINGS (T = 25C) A 1 Rating Symbol Max Unit SC70/SOT323 CollectorBase Voltage V 50 Vdc CBO XX M CASE 419 CollectorEmitter Voltage V 50 Vdc STYLE 3 CEO 1 Collector Current Continuous I 100 mAdc C SC75 Input Forward Voltage V 12 Vdc IN(fwd) CASE 463 XX M STYLE 1 Input Reverse Voltage V 10 Vdc IN(rev) 1 Stresses exceeding those listed in the Maximum Ratings table may damage the SOT723 device. If any of these limits are exceeded, device functionality should not be XX M CASE 631AA assumed, damage may occur and reliability may be affected. STYLE 1 1 SOT1123 X M CASE 524AA 1 STYLE 1 XXX = Specific Device Code M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation may vary depending up- on manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: November, 2016 Rev. 4 DTC123E/DMUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3 Table 1. ORDERING INFORMATION Device Part Marking Package Shipping MUN2231T1G 8H SC59 3000 / Tape & Reel (PbFree) MMUN2231LT1G, NSVMMUN2231LT1G* A8H SOT23 3000 / Tape & Reel (PbFree) MUN5231T1G 8H SC70/SOT323 3000 / Tape & Reel (PbFree) DTC123EET1G 8H SC75 3000 / Tape & Reel (PbFree) DTC123EM3T5G, NSVDTC123EM3T5G* 8H SOT723 8000 / Tape & Reel (PbFree) NSBC123EF3T5G E (180)** SOT1123 8000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AEC-Q101 Qualified and PPAP Capable. ** (xx) = Degree rotation in the clockwise direction. 300 250 (1) SC75 and SC70/SOT323 Minimum Pad 200 (2) SC59 Minimum Pad (1) (2) (3) (4) (5) (3) SOT23 Minimum Pad 2 150 (4) SOT1123 100 mm , 1 oz. copper trace (5) SOT723 Minimum Pad 100 50 0 50 25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (C) Figure 1. Derating Curve www.onsemi.com 2 P , POWER DISSIPATION (mW) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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