X-On Electronics has gained recognition as a prominent supplier of NSVMMUN2112LT1G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. NSVMMUN2112LT1G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

NSVMMUN2112LT1G ON Semiconductor

NSVMMUN2112LT1G electronic component of ON Semiconductor
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Part No.NSVMMUN2112LT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased SS SOT23 BR XSTR PNP 50V
Datasheet: NSVMMUN2112LT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.121 ea
Line Total: USD 0.12 
Availability - 9413
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9413
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 0.121
10 : USD 0.0836
100 : USD 0.0429
1000 : USD 0.0374
3000 : USD 0.0286
9000 : USD 0.0275
24000 : USD 0.022
45000 : USD 0.0209

   
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We are delighted to provide the NSVMMUN2112LT1G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSVMMUN2112LT1G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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MUN2112, MMUN2112L, MUN5112, DTA124EE, DTA124EM3, NSBA124EF3 Digital Transistors (BRT) R1 = 22 k , R2 = 22 k www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT) contains a single transistor with a monolithic bias (INPUT) R2 network consisting of two resistors a series base resistor and a base emitter resistor. The BRT eliminates these individual components by PIN 2 integrating them into a single device. The use of a BRT can reduce EMITTER (GROUND) both system cost and board space. Features MARKING DIAGRAMS Simplifies Circuit Design Reduces Board Space SC59 XX M CASE 318D Reduces Component Count STYLE 1 S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirements AEC-Q101 Qualified and PPAP Capable SOT23 These Devices are PbFree, Halogen Free/BFR Free and are RoHS XXX M CASE 318 Compliant STYLE 6 1 MAXIMUM RATINGS (T = 25C) A Rating Symbol Max Unit SC70/SOT323 XX M CASE 419 CollectorBase Voltage V 50 Vdc CBO STYLE 3 1 CollectorEmitter Voltage V 50 Vdc CEO SC75 Collector Current Continuous I 100 mAdc C XX M CASE 463 Input Forward Voltage V 40 Vdc IN(fwd) STYLE 1 1 Input Reverse Voltage V 10 Vdc IN(rev) SOT723 Stresses exceeding those listed in the Maximum Ratings table may damage the XX M CASE 631AA device. If any of these limits are exceeded, device functionality should not be STYLE 1 assumed, damage may occur and reliability may be affected. 1 SOT1123 X M CASE 524AA 1 STYLE 1 XXX = Specific Device Code M = Date Code* =PbFree Package (Note: Microdot may be in either location) *Date Code orientation may vary depending up- on manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: October, 2016 Rev. 6 DTA124E/DMUN2112, MMUN2112L, MUN5112, DTA124EE, DTA124EM3, NSBA124EF3 Table 1. ORDERING INFORMATION Device Part Marking Package Shipping MUN2112T1G, NSVMUN2112T1G 6B SC59 3000 / Tape & Reel (PbFree) MMUN2112LT1G, NSVMMUN2112LT1G A6B SOT23 3000 / Tape & Reel (PbFree) MUN5112T1G, SMUN5112T1G 6B SC70/SOT323 3000 / Tape & Reel (PbFree) DTA124EET1G 6B SC75 3000 / Tape & Reel (PbFree) DTA124EM3T5G 6B SOT723 8000 / Tape & Reel (PbFree) NSBA124EF3T5G Y SOT1123 8000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 300 250 (1) SC75 and SC70/SOT323 Minimum Pad 200 (2) SC59 Minimum Pad (1) (2) (3) (4) (5) (3) SOT23 Minimum Pad 150 2 (4) SOT1123 100 mm , 1 oz. copper trace (5) SOT723 Minimum Pad 100 50 0 50 25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (C) Figure 1. Derating Curve www.onsemi.com 2 P , POWER DISSIPATION (mW) D

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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