X-On Electronics has gained recognition as a prominent supplier of NSVMMUN2217LT1G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. NSVMMUN2217LT1G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

NSVMMUN2217LT1G ON Semiconductor

NSVMMUN2217LT1G electronic component of ON Semiconductor
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See Product Specifications
Part No.NSVMMUN2217LT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased NPN Bipolar Digital Transistor (BRT)
Datasheet: NSVMMUN2217LT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.0991 ea
Line Total: USD 0.1 
Availability - 7671
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7671
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 0.0991
10 : USD 0.0681
100 : USD 0.0351
1000 : USD 0.032
3000 : USD 0.0245
9000 : USD 0.0203
24000 : USD 0.0203
45000 : USD 0.0192
99000 : USD 0.0181

   
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We are delighted to provide the NSVMMUN2217LT1G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSVMMUN2217LT1G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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MMUN2217L, NSVMMUN2217L Digital Transistors (BRT) R1 = 4.7 k , R2 = 10 k NPN Transistors with Monolithic Bias www.onsemi.com Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single PIN 3 device and its external resistor bias network. The Bias Resistor COLLECTOR Transistor (BRT) contains a single transistor with a monolithic bias (OUTPUT) PIN 1 R1 network consisting of two resistors a series base resistor and a BASE baseemitter resistor. The BRT eliminates these individual (INPUT) R2 components by integrating them into a single device. The use of a BRT PIN 2 can reduce both system cost and board space. EMITTER (GROUND) Features Simplifies Circuit Design MARKING DIAGRAM Reduces Board Space Reduces Component Count SOT23 NSV Prefix for Automotive and Other Applications Requiring AAM M CASE 318 Unique Site and Control Change Requirements AECQ101 STYLE 6 Qualified and PPAP Capable 1 These Devices are PbFree, Halogen Free/BFR Free and are RoHS AAM Specific Device Code Compliant M = Date Code* = PbFree Package MAXIMUM RATINGS (T = 25C) A (Note: Microdot may be in either location) Rating Symbol Max Unit *Date Code orientation may vary depending up- on manufacturing location. CollectorBase Voltage V 50 Vdc CBO CollectorEmitter Voltage V 50 Vdc CEO ORDERING INFORMATION Collector Current Continuous I 100 mAdc C See detailed ordering, marking, and shipping information in Input Forward Voltage V 20 Vdc the package dimensions section on page 2 of this data sheet. IN(fwd) Input Reverse Voltage V 7 Vdc IN(rev) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2016 Rev. 3 DTC143X/DMMUN2217L, NSVMMUN2217L Table 1. ORDERING INFORMATION Device Part Marking Package Shipping MMUN2217LT1G AAM SC23 3000 / Tape & Reel (PbFree) NSVMMUN2217LT1G AAM SC23 3000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 300 250 (1) SOT23 Minimum Pad 200 (1) 150 100 50 0 50 25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (C) Figure 1. Derating Curve Table 2. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit THERMAL CHARACTERISTICS (SOT23) (MMUN2217L) Total Device Dissipation P D T = 25C (Note 1) 246 mW A (Note 2) 400 Derate above 25C (Note 1) 2.0 mW/C (Note 2) 3.2 Thermal Resistance, (Note 1) R 508 C/W JA Junction to Ambient (Note 2) 311 Thermal Resistance, (Note 1) R 174 C/W JL Junction to Lead (Note 2) 208 Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. FR4 Minimum Pad. 2. FR4 1.0 x 1.0 Inch Pad. www.onsemi.com 2 P , POWER DISSIPATION (mW) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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