MUN531335DW1 Complementary Bias Resistor Transistors NPN - R1=47 k , R2=47 k PNP - R1=2.2 k , R2=47 k www.onsemi.com NPN and PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias R 1 network consisting of two resistors a series base resistor and a R 2 base-emitter resistor. The BRT eliminates these individual Q 1 components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. Q 2 R 2 Features R 1 Simplifies Circuit Design Reduces Board Space (4) (5) (6) Reduces Component Count NSV Prefix for Automotive and Other Applications Requiring MARKING DIAGRAM Unique Site and Control Change Requirements AEC-Q101 6 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SOT363 AJ M Compliant CASE 419B 1 MAXIMUM RATINGS (T = 25C, common for Q (PNP), unless otherwise noted) A 1 AJ = Specific Device Code Rating Symbol Max Unit M = Date Code* CollectorBase Voltage V 50 Vdc CBO = Pb-Free Package CollectorEmitter Voltage V 50 Vdc CEO (Note: Microdot may be in either location) Collector Current Continuous I 100 mAdc *Date Code orientation may vary depending up- C on manufacturing location. Input Forward Voltage V 12 Vdc IN(fwd) Input Reverse Voltage V 5 Vdc IN(rev) MAXIMUM RATINGS ORDERING INFORMATION (T = 25C, common for Q (NPN), unless otherwise noted) A 2 Device Package Shipping Rating Symbol Max Unit NSVMUN531335DW1T1G SOT363 3000 / Tape Collector-Base Voltage V 50 Vdc CBO (PbFree) & Reel Collector-Emitter Voltage V 50 Vdc CEO NSVMUN531335DW1T3G SOT363 10000 / Collector Current Continuous I 100 mAdc C (PbFree) Tape & Reel Input Forward Voltage V 40 Vdc IN(fwd) For information on tape and reel specifications, Input Reverse Voltage V 10 Vdc IN(rev) including part orientation and tape sizes, please Stresses exceeding those listed in the Maximum Ratings table may damage the refer to our Tape and Reel Packaging Specification device. If any of these limits are exceeded, device functionality should not be Brochure, BRD8011/D. assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: November, 2016 Rev. 2 MUN531335DW1/DMUN531335DW1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MUN531335DW1 (SOT363) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 1) 187 mW A (Note 2) 256 Derate above 25C (Note 1) 1.5 mW/C (Note 2) 2.0 Thermal Resistance, (Note 1) R 670 C/W JA Junction to Ambient (Note 2) 490 MUN531335DW1 (SOT363) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 1) 250 mW A (Note 2) 385 Derate above 25C (Note 1) 2.0 mW/C (Note 2) 3.0 Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 493 (Note 2) 325 Thermal Resistance, R C/W JL Junction to Lead (Note 1) 188 (Note 2) 208 Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. FR4 Minimum Pad. 2. FR4 1.0 1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels. www.onsemi.com 2