DATA SHEET www.onsemi.com MOSFET - SiC Power, Single V R MAX I MAX (BR)DSS DS(ON) D 1200 V 30 m 18 V 68 A N-Channel, TO247-4L 1200 V, 22 m , 68 A D NTH4L022N120M3S Features Typ. R = 22 m V = 18 V G DS(on) GS S1: Driver Source Low Switching Losses (Typ. EON 490 J at 40 A, 800 V) S2: Power Source 100% Avalanche Tested S1 S2 These Devices are RoHS Compliant NCHANNEL MOSFET Typical Applications Solar Inverters Electric Vehicle Charging Stations UPS (Uninterruptible Power Supplies) Energy Storage Systems D SMPS (Switch Mode Power Supplies) S2 S1 G MAXIMUM RATINGS (T = 25C unless otherwise noted) TO2474L J CASE 340CJ Parameter Symbol Value Unit DraintoSource Voltage V 1200 V DSS GatetoSource Voltage V 10/+22 V MARKING DIAGRAM GS Recommended Operation Values T < 175C V 3/+18 V C GSop of GatetoSource Voltage Continuous Drain Steady T = 25C I 68 A C D Current (Note 1) State H4L022 Power Dissipation P 352 W 120M3S D (Note 1) AYWWZZ Continuous Drain Steady T = 100C I 48 A C D Current (Note 1) State Power Dissipation P 176 W D (Note 1) H4L022120M3S = Specific Device Code A = Assembly Location Pulsed Drain Current T = 25C I 246 A C DM Y = Year (Note 2) WW = Work Week Operating Junction and Storage Temperature T , T 55 to C J stg ZZ = Lot Traceability Range +175 Source Current (Body Diode) I 72 A S ORDERING INFORMATION T = 25C, V = 3 V C GS Single Pulse DraintoSource Avalanche E 267 mJ Device Package Shipping AS Energy (I = 23.1 A, L = 1 mH) (Note 3) L(pk) NTH4L022N120M3S TO2474L 30 Units / Maximum Lead Temperature for Soldering T 300 C L Tube (1/8 from case for 5 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Repetitive rating, limited by max junction temperature. = 25C L = 1 mH, I = 23.1 A, 3. EAS of 267 mJ is based on starting T J AS V = 100 V, V = 18 V. DD GS Semiconductor Components Industries, LLC, 2021 1 Publication Order Number: October, 2021 Rev. 1 NTH4L022N120M3S/DNTH4L022N120M3S THERMAL CHARACTERISTICS Parameter Symbol Typ Max Unit JunctiontoCase Steady State (Note 1) R 0.33 0.43 C/W JC JunctiontoAmbient Steady State (Note 1) R 40 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFFSTATE CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 1 mA 1200 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T I = 1 mA, referenced to 25C 0.3 V/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 100 A DSS GS J V = 1200 V DS GatetoSource Leakage Current I V = +22/10 V, V = 0 V 1 A GSS GS DS ONSTATE CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 20 mA 2.04 2.72 4.4 V GS(TH) GS DS D Recommended Gate Voltage V 3 +18 V GOP DraintoSource On Resistance R V = 18 V, I = 40 A, T = 25C 22 30 m DS(on) GS D J V = 18 V, I = 40 A, T = 175C 47 GS D J Forward Transconductance g V = 10 V, I = 40 A 34 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C V = 0 V, f = 1 MHz, V = 800 V 3175 pF ISS GS DS Output Capacitance C 146 OSS Reverse Transfer Capacitance C 12 RSS V = 3/18 V, V = 800 V, nC Total Gate Charge Q 151 G(TOT) GS DS I = 40 A D Threshold Gate Charge Q 20 G(TH) GatetoSource Charge Q 34 GS GatetoDrain Charge Q 40 GD GateResistance R f = 1 MHz 1.5 G SWITCHING CHARACTERISTICS TurnOn Delay Time t V = 3/18 V, 18 ns d(ON) GS V = 800 V, DS Rise Time t 24 r I = 40 A, D R = 4.5 G TurnOff Delay Time t 48 d(OFF) inductive load (Note 4) Fall Time t 13 f TurnOn Switching Loss E 490 J ON TurnOff Switching Loss E 221 OFF Total Switching Loss E 771 tot SOURCEDRAIN DIODE CHARACTERISTICS V = 3 V, T = 25C A Continuous SourceDrain Diode Forward I 72 SD GS C Current Pulsed SourceDrain Diode Forward I 246 SDM Current (Note 2) Forward Diode Voltage V V = 3 V, I = 40 A, T = 25C 4.5 V SD GS SD J www.onsemi.com 2