DATA SHEET www.onsemi.com Silicon Carbide (SiC) V R MAX I MAX (BR)DSS DS(ON) D 650 V 70 m 18 V 47 A MOSFET 44 mohm, 650 V, M2, TO-247-4L D NTH4L060N065SC1 Features G Typ. R = 44 m V = 18 V DS(on) GS S1: Kelvin Source Typ. R = 60 m V = 15 V DS(on) GS S2: Power Source Ultra Low Gate Charge (Q = 74 nC) G(tot) S1 S2 Low Capacitance (C = 133 pF) oss NCHANNEL MOSFET 100% Avalanche Tested T = 175C J This Device is Halide Free and RoHS Compliant with exemption 7a, PbFree 2LI (on second level interconnection) Typical Applications SMPS (Switching Mode Power Supplies) D S2 Solar Inverters S1 G UPS (Uninterruptable Power Supplies) TO2474L CASE 340CJ Energy Storages MAXIMUM RATINGS (T = 25C unless otherwise noted) J MARKING DIAGRAM Parameter Symbol Value Unit DraintoSource Voltage V 650 V DSS GatetoSource Voltage V 8/+22 V GS Recommended Operation Values T < 175C V 5/+18 V C GSop of GatetoSource Voltage H4L060 065SC1 Continuous Drain Steady T = 25C I 47 A C D AYWWZZ Current (Note 1) State Power Dissipation P 176 W D (Note 1) Continuous Drain Steady T = 100C I 33 A C D Current (Note 1) State H4L060065SC1 = Specific Device Code A = Assembly Location Power Dissipation P 88 W D Y = Year (Note 1) WW = Work Week Pulsed Drain Current T = 25C I 152 A C DM ZZ = Lot Traceability (Note 2) Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 ORDERING INFORMATION Source Current (Body Diode) I 35 A S Single Pulse DraintoSource Avalanche E 51 mJ Device Package Shipping AS Energy (I = 10.1 A, L = 1 mH) (Note 3) L(pk) NTH4L060N065SC1 TO2474L 30 Units / Maximum Lead Temperature for Soldering T 260 C L Tube (1/8 from case for 5 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Repetitive rating, limited by max junction temperature. 3. EAS of 51 mJ is based on starting T = 25C L = 1 mH, I = 10.1 A, J AS V = 50 V, V = 18 V. DD GS Semiconductor Components Industries, LLC, 2021 1 Publication Order Number: May, 2022 Rev. 2 NTH4L060N065SC1/DNTH4L060N065SC1 Table 1. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Max Unit JunctiontoCase Steady State (Note 1) R 0.85 C/W JC JunctiontoAmbient Steady State (Note 1) R 40 JA Table 2. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 1 mA 650 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T I = 20 mA, referenced to 25C 0.15 V/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 A DSS GS J V = 650 V DS T = 175C 1 mA J GatetoSource Leakage Current I V = +18/5 V, V = 0 V 250 nA GSS GS DS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 6.5 mA 1.8 2.8 4.3 V GS(TH) GS DS D Recommended Gate Voltage V 5 +18 V GOP DraintoSource On Resistance R V = 15 V, I = 20 A, T = 25C 60 m DS(on) GS D J V = 18 V, I = 20 A, T = 25C 44 70 GS D J V = 18 V, I = 20 A, T = 175C 50 GS D J Forward Transconductance g V = 10 V, I = 20 A 12 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE V = 0 V, f = 1 MHz, V = 325 V pF Input Capacitance C 1473 ISS GS DS Output Capacitance C 133 OSS Reverse Transfer Capacitance C 13 RSS Total Gate Charge Q V = 5/18 V, V = 520 V, 74 nC G(TOT) GS DS I = 20 A D GatetoSource Charge Q 20 GS GatetoDrain Charge Q 23 GD GateResistance R f = 1 MHz 3.9 G SWITCHING CHARACTERISTICS TurnOn Delay Time t V = 5/18 V, V = 400 V, 11 ns d(ON) GS DS I = 20 A, R = 2.2 D G Rise Time t 14 r Inductive load TurnOff Delay Time t 24 d(OFF) Fall Time t 11 f TurnOn Switching Loss E 45 J ON TurnOff Switching Loss E 18 OFF Total Switching Loss E 63 tot DRAINSOURCE DIODE CHARACTERISTICS Continuous DrainSource Diode Forward I V = 5 V, T = 25C 35 A SD GS J Current Pulsed DrainSource Diode Forward I 152 SDM Current (Note 2) Forward Diode Voltage V V = 5 V, I = 20 A, T = 25C 4.3 V SD GS SD J www.onsemi.com 2