DATA SHEET www.onsemi.com Silicon Carbide (SiC) V R MAX I MAX (BR)DSS DS(ON) D MOSFET 32 mohm, 650 V, 650 V 50 m 18 V 66 A M2, TO-247-3L NCHANNEL MOSFET NTHL045N065SC1 D Features Typ. R = 32 m V = 18 V DS(on) GS Typ. R = 42 m V = 15 V DS(on) GS Ultra Low Gate Charge (Q = 105 nC) G(tot) G High Speed Switching with Low Capacitance (C = 162 pF) oss 100% Avalanche Tested S T < 175C J This Device is Halide Free and RoHS Compliant with exemption 7a, PbFree 2LI (on second level interconnection) Typical Applications SMPS (Switching Mode Power Supplies) Solar Inverters G D UPS (Uninterruptable Power Supplies) S TO2473LD Energy Storages CASE 340CX MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit MARKING DIAGRAM DraintoSource Voltage V 650 V DSS GatetoSource Voltage V 8/+22 V GS Recommended Operation Values T < 175C V 5/+18 V C GSop of GatetoSource Voltage HL045N Continuous Drain Steady T = 25C I 66 A C D 065SC1 Current (Note 1) State Y&Z&3&K Power Dissipation P 291 W D (Note 1) Steady T = 100C Continuous Drain I 46 A C D Current (Note 1) State Power Dissipation P 145 W D HL045N065SC1 = Specific Device Code (Note 1) Y = onsemi Logo Pulsed Drain Current T = 25C I 191 A C DM &Z = Assembly Plant Code (Note 2) &3 = Data Code (Year & Week) Operating Junction and Storage Temperature T , T 55 to C J stg &K = Lot Range +175 Source Current (Body Diode) I 75 A S Single Pulse DraintoSource Avalanche E 72 mJ AS ORDERING INFORMATION Energy (I = 12 A, L = 1 mH) (Note 3) L(pk) Maximum Lead Temperature for Soldering T 300 C L Device Package Shipping (1/8 from case for 5 s) NTHL045N065SC1 TO247 30 Units / Stresses exceeding those listed in the Maximum Ratings table may damage the Long Lead Tube device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Repetitive rating, limited by max junction temperature. 3. EAS of 72 mJ is based on starting T = 25C L = 1 mH, I = 12 A, J AS V = 50 V, V = 18 V. DD GS Semiconductor Components Industries, LLC, 2021 1 Publication Order Number: May, 2022 Rev. 3 NTHL045N065SC1/DNTHL045N065SC1 Table 1. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Max Unit JunctiontoCase Steady State (Note 1) R 0.52 C/W JC JunctiontoAmbient Steady State (Note 1) R 40 JA Table 2. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 1 mA 650 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T I = 20 mA, referenced to 25C 0.15 V/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 A DSS GS J V = 650 V DS T = 175C 1 mA J GatetoSource Leakage Current I V = +22/8 V, V = 0 V 250 nA GSS GS DS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 8 mA 1.8 2.8 4.3 V GS(TH) GS DS D Recommended Gate Voltage V 5 +18 V GOP DraintoSource On Resistance R V = 15 V, I = 25 A, T = 25C 42 m DS(on) GS D J V = 18 V, I = 25 A, T = 25C 32 50 GS D J V = 18 V, I = 25 A, T = 175C 42 GS D J Forward Transconductance g V = 10 V, I = 25 A 14 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE V = 0 V, f = 1 MHz, V = 325 V pF Input Capacitance C 1870 ISS GS DS Output Capacitance C 162 OSS Reverse Transfer Capacitance C 14 RSS Total Gate Charge Q V = 5/18 V, V = 520 V, 105 nC G(TOT) GS DS I = 25 A D GatetoSource Charge Q 27 GS GatetoDrain Charge Q 30 GD GateResistance R f = 1 MHz 3.1 G SWITCHING CHARACTERISTICS TurnOn Delay Time t V = 5/18 V, V = 400 V, 14 ns d(ON) GS DS I = 25 A, R = 2.2 D G Rise Time t 30 r Inductive load TurnOff Delay Time t 26 d(OFF) Fall Time t 7 f TurnOn Switching Loss E 198 J ON TurnOff Switching Loss E 28 OFF Total Switching Loss E 226 tot DRAINSOURCE DIODE CHARACTERISTICS Continuous DrainSource Diode Forward I V = 5 V, T = 25C 75 A SD GS J Current Pulsed DrainSource Diode Forward I 191 SDM Current (Note 2) Forward Diode Voltage V V = 5 V, I = 25 A, T = 25C 4.4 V SD GS SD J www.onsemi.com 2