NTST30U100CT, NTSB30U100CT-1, NTSJ30U100CTG, NTSB30U100CTG Very Low Forward Voltage www.onsemi.com Trench-based Schottky Rectifier VERY LOW FORWARD VOLT- AGE, LOW LEAKAGE SCHOT- Exceptionally Low V = 0.42 V at I = 5 A F F TKY BARRIER RECTIFIERS 30 AMPERES, Features 100 VOLTS Fine Lithography Trenchbased Schottky Technology for Very Low Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability PIN CONNECTIONS Low Power Loss and Lower Operating Temperature 1 Higher Efficiency for Achieving Regulatory Compliance 2, 4 Low Thermal Resistance 3 High Surge Capability PbFree and HalideFree Packages are Available 4 4 Typical Applications Switching Power Supplies including Notebook / Netbook Adapters, ATX and Flat Panel Display High Frequency and DCDC Converters Freewheeling and ORing diodes TO220AB I2PAK Reverse Battery Protection CASE 221A CASE 418D 1 1 2 2 STYLE 6 STYLE 3 3 Instrumentation 3 Mechanical Characteristics 4 Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 940 0.125 in Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Maximum for TO220FP D2PAK 10 sec CASE 221AH CASE 418B 1 2 3 ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: December, 2014 Rev. 8 NTST30U100CT/DNTST30U100CT, NTSB30U100CT 1, NTSJ30U100CTG, NTSB30U100CTG MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V , T = 125C) Per device 30 R C Per diode 15 Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz, T = 120C) Per device 60 R C Per diode 30 Nonrepetitive Peak Surge Current I 160 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature T 40 to +150 C J Storage Temperature T 40 to +150 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS NTST30U100CTG, Rating Symbol NTSB30U100CT1G NTSB30U100CTG NTSJ30U100CTG Unit Maximum Thermal Resistance per Diode JunctiontoCase R 2.5 0.93 3.81 C/W JC JunctiontoAmbient 70 46.5 105 C/W R JA ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Typ Max Unit Maximum Instantaneous Forward Voltage (Note 1) v V F (I = 5 A, T = 25C) 0.47 F J (I = 7.5 A, T = 25C) 0.52 F J (I = 15 A, T = 25C) 0.66 0.80 F J (I = 5 A, T = 125C) 0.42 F J (I = 7.5 A, T = 125C) 0.48 F J (I = 15 A, T = 125C) 0.60 0.65 F J Maximum Instantaneous Reverse Current (Note 1) I R (V = 70 V, T = 25C) 15 A R J (V = 70 V, T = 125C) 12 mA R J (Rated dc Voltage, T = 25C) 65 675 A J (Rated dc Voltage, T = 125C) 32 60 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% www.onsemi.com 2