NUF6010MU 6-Channel EMI Filter with Integrated ESD Protection The NUF6010MU is a sixchannel (CRC) Pistyle EMI filter array with integrated ESD protection. Its typical component values of R = 100 and C = 7 pF deliver a cutoff frequency of 250 MHz and www.onsemi.com stop band attenuation greater than 20 dB from 800 MHz to 3.0 GHz. This performance makes the part ideal for parallel interfaces with data rates up to 167 Mbps in applications where wireless interference MARKING 12 must be minimized. The specified attenuation range is very effective DIAGRAM in minimizing interference from 2G/3G, GPS, Bluetooth and 1 610M WLAN signals. UDFN12 The NUF6010MU is available in the lowprofile 12lead MU SUFFIX 1 1.2x2.5mm UDFN12 surface mount package. CASE 517AE Features/Benefits 610 = Specific Device Code M = Date and Assembly Location 8.0 kV ESD Protection on each channel (IEC6100042 Level 4, = PbFree Package Contact Discharge) (Note: Microdot may be in either location) R/C Values of 100 and 7 pF deliver Exceptional S21 Performance Characteristics of 250 MHz f and 20 dB Stop Band Attenuation 3dB from 800 MHz to 3.0 GHz ORDERING INFORMATION Integrated EMI/ESD System Solution in UDFN Package Offers Device Package Shipping Exceptional Cost, System Reliability and Space Savings NUF6010MUT2G UDFN12 3000 / Tape & Reel These Devices are PbFree, Halogen Free/BFR Free and are RoHS (PbFree) Compliant For information on tape and reel specifications, Applications including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications EMI Filtering for LCD and Camera Data Lines Brochure, BRD8011/D. EMI Filtering and Protection for I/O Ports and Keypads 0 5 10 15 R=100 Filter + ESD Filter + ESD n n 20 25 C = 7 pF C = 7 pF d d 30 35 See Table 1 for pin description 40 45 1.0E+6 10.0E+6 100.0E+6 1.0E+9 10.0E+9 FREQUENCY (Hz) Figure 1. Electrical Schematic Figure 2. Typical Insertion Loss Curve Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: March, 2018 Rev. 7 NUF6010MU/D S21 (dB)NUF6010MU 12 3 4 5 6 GND PAD 12 11 10 9 8 7 (Bottom View) Figure 3. Pin Diagram Table 1. FUNCTIONAL PIN DESCRIPTION Filter Device Pins Description Filter 1 1 & 12 Filter + ESD Channel 1 Filter 2 2 & 11 Filter + ESD Channel 2 Filter 3 3 & 10 Filter + ESD Channel 3 Filter 4 4 & 9 Filter + ESD Channel 4 Filter 5 5 & 8 Filter + ESD Channel 5 Filter 6 6 & 7 Filter + ESD Channel 6 Ground Pad GND Ground MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit ESD Discharge IEC6100042 Contact Discharge V 8.0 kV PP DC Power per Resistor P 100 mW R DC Power per Package P 600 mW T Operating Temperature Range T 40 to 85 C OP Storage Temperature Range T 55 to 150 C STG Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) T 260 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Unit Maximum Reverse Working Voltage V 5.0 V RWM Breakdown Voltage V I = 1.0 mA 6.0 7.0 8.0 V BR R Leakage Current I V = 3.3 V 10 100 nA R RWM Resistance R I = 20 mA 85 100 115 A R Diode Capacitance C V = 2.5 V, f = 1.0 MHz 7.0 9.0 pF d R Line Capacitance C V = 2.5 V, f = 1.0 MHz 14 18 pF L R 3 dB CutOff Frequency (Note 1) f Above this frequency, 250 MHz 3dB appreciable attenuation occurs 6 dB CutOff Frequency (Note 1) f Above this frequency, 395 MHz 6dB appreciable attenuation occurs Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. 50 source and 50 load termination. www.onsemi.com 2