X-On Electronics has gained recognition as a prominent supplier of NUF8010MUT2G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. NUF8010MUT2G ESD Suppressors / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

NUF8010MUT2G ON Semiconductor

NUF8010MUT2G electronic component of ON Semiconductor
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Part No.NUF8010MUT2G
Manufacturer: ON Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ON Semiconductor EMI Network Filter Arrays 8L EMI FILTER W ESD
Datasheet: NUF8010MUT2G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7682 ea
Line Total: USD 0.77 
Availability - 31
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
31
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7682
10 : USD 0.6693
100 : USD 0.475
500 : USD 0.4071
1000 : USD 0.3645
3000 : USD 0.3139
6000 : USD 0.3139
9000 : USD 0.3047
24000 : USD 0.3013

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Capacitance
Frequency Range
Inductance
Operating Temperature Range
Product
Resistance
Type
Brand
Circuit Type
Number Of Elements
Case Height
Case Length
Case Width
Cutoff Frequency
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NUF8010MUT2G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NUF8010MUT2G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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NUF8010MU 8-Channel EMI Filter with Integrated ESD Protection The NUF8010MU is a eight channel (CRC) Pistyle EMI filter array with integrated ESD protection. Its typical component values of R = 100 and C = 7 pF deliver a cutoff frequency of 215 MHz and NUF8010MU Table 1. FUNCTIONAL PIN DESCRIPTION Filter Device Pins Description Filter 1 1 & 16 Filter + ESD Channel 1 Filter 2 2 & 15 Filter + ESD Channel 2 Filter 3 3 & 14 Filter + ESD Channel 3 Filter 4 4 & 13 Filter + ESD Channel 4 Filter 5 5 & 12 Filter + ESD Channel 5 Filter 6 6 & 11 Filter + ESD Channel 6 Filter 7 7 & 10 Filter + ESD Channel 6 Filter 8 8 & 9 Filter + ESD Channel 6 Ground Pad GND Ground MAXIMUM RATINGS Parameter Symbol Value Unit ESD Discharge IEC6100042 Contact Discharge V 8.0 kV PP Operating Temperature Range T 40 to 85 C OP Storage Temperature Range T 55 to 150 C STG Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) T 260 C L Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Unit Maximum Reverse Working Voltage V 5.0 V RWM Breakdown Voltage V I = 1.0 mA 6.0 7.0 8.0 V BR R Leakage Current I V = 3.3 V 100 nA R RWM Resistance R I = 20 mA 85 100 115 A R Diode Capacitance C V = 2.5 V, f = 1.0 MHz 7 11 pF d R Line Capacitance C V = 2.5 V, f = 1.0 MHz 14 18 pF L R 3 dB CutOff Frequency (Note 1) f Above this frequency, 215 MHz 3dB appreciable attenuation occurs 6 dB CutOff Frequency f Above this frequency, 280 MHz 6dB appreciable attenuation occurs 1. 50 source and 50 load termination.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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ON-SEMI
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OOF
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