X-On Electronics has gained recognition as a prominent supplier of NUP1301ML3T1G Rectifiers across the USA, India, Europe, Australia, and various other global locations. NUP1301ML3T1G Rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

NUP1301ML3T1G ON Semiconductor

NUP1301ML3T1G electronic component of ON Semiconductor
NUP1301ML3T1G ON Semiconductor
NUP1301ML3T1G Rectifiers
NUP1301ML3T1G  Semiconductors

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See Product Specifications
Part No. NUP1301ML3T1G
Manufacturer: ON Semiconductor
Category: Rectifiers
Description: Rectifiers Low Cap. Diode Array For SNGL Line w/ESD
Datasheet: NUP1301ML3T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0725 ea
Line Total: USD 217.5 
Availability - 8730
Ship by Wed. 09 Apr to Tue. 15 Apr
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
8730
Ship by Wed. 09 Apr to Tue. 15 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.0725
6000 : USD 0.0717
9000 : USD 0.0696
12000 : USD 0.0691
27000 : USD 0.0676
51000 : USD 0.0662
102000 : USD 0.0659
150000 : USD 0.0656

1702
Ship by Wed. 16 Apr to Mon. 21 Apr
MOQ : 5
Multiples : 5
5 : USD 0.2552
50 : USD 0.1981
150 : USD 0.1488
500 : USD 0.1103
3000 : USD 0.0997
6000 : USD 0.0936

37941
Ship by Mon. 07 Apr to Wed. 09 Apr
MOQ : 1
Multiples : 1
1 : USD 0.3175
10 : USD 0.105
100 : USD 0.0876
500 : USD 0.0781
1000 : USD 0.0759
3000 : USD 0.0671
6000 : USD 0.066
24000 : USD 0.066

2866
Ship by Mon. 07 Apr to Wed. 09 Apr
MOQ : 5
Multiples : 5
5 : USD 0.224
25 : USD 0.1484
100 : USD 0.133
160 : USD 0.1148
435 : USD 0.1078

14550
Ship by Wed. 09 Apr to Tue. 15 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.1339

8730
Ship by Wed. 09 Apr to Tue. 15 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.098
6000 : USD 0.0933
9000 : USD 0.0905
12000 : USD 0.0899
27000 : USD 0.0879

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Series
Packaging
Product
Brand
Factory Pack Quantity :
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NUP1301ML3T1G from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NUP1301ML3T1G and other electronic components in the Rectifiers category and beyond.

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NUP1301ML3T1G, SZNUP1301ML3T1G Low Capacitance Diode Array for ESD Protection in a Single Data Line www.onsemi.com NUP1301ML3T1G is a MicroIntegration device designed to provide protection for sensitive components from possible harmful electrical transients for example, ESD (electrostatic discharge). Features Low Capacitance (0.9 pF Maximum) SOT23 Single Package Integration Design CASE 318 STYLE 11 Provides ESD Protection for JEDEC Standards JESD22 Machine Model = Class C ANODE CATHODE Human Body Model = Class 3B 1 2 Protection for IEC6100042 (Level 4) 3 8.0 kV (Contact) CATHODE/ANODE 15 kV (Air) Ensures Data Line Speed and Integrity MARKING DIAGRAM Fewer Components and Less Board Space Direct the Transient to Either Positive Side or to the Ground 53 M SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 1 PbFree Package is Available 53 = Device Code M = Date Code Applications = PbFree Package T1/E1 Secondary IC Protection (Note: Microdot may be in either location) T3/E3 Secondary IC Protection HDSL, IDSL Secondary IC Protection ORDERING INFORMATION Video Line Protection Device Package Shipping Microcontroller Input Protection NUP1301ML3T1G SOT23 3,000 / Base Stations (PbFree) Tape & Reel 2 I C Bus Protection SZNUP1301ML3T1G SOT23 3,000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: October, 2016 Rev. 7 NUP1301ML3T1/DNUP1301ML3T1G, SZNUP1301ML3T1G MAXIMUM RATINGS (Each Diode) (T = 25C unless otherwise noted) J Rating Symbol Value Unit Reverse Voltage V 70 Vdc R Forward Current I 215 mAdc F Peak Forward Surge Current I 500 mAdc FM(surge) Repetitive Peak Reverse Voltage V 70 V RRM Average Rectified Forward Current (Note 1) I mA F(AV) (averaged over any 20 ms period) 715 Repetitive Peak Forward Current I 450 mA FRM NonRepetitive Peak Forward Current I A FSM 2.0 t = 1.0 s t = 1.0 ms 1.0 t = 1.0 S 0.5 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 0.75 0.062 in. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance JunctiontoAmbient R 625 C/W JA Lead Solder Temperature T C L Maximum 10 Seconds Duration 260 Junction Temperature T 65 to 150 C J Storage Temperature T 65 to +150 C stg ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Each Diode) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage V Vdc (BR) (I = 100 A) 70 (BR) Reverse Voltage Leakage Current I Adc R (V = 70 Vdc) 2.5 R (V = 25 Vdc, T = 150C) 30 R J (V = 70 Vdc, T = 150C) 50 R J Diode Capacitance (between I/O and ground) C pF D (V = 0, f = 1.0 MHz) 0.9 R Forward Voltage V mV F dc (I = 1.0 mAdc) 715 F (I = 10 mAdc) 855 F (I = 50 mAdc) 1000 F (I = 150 mAdc) 1250 F Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. FR5 = 1.0 0.75 0.062 in. 3. Alumina = 0.4 0.3 0.024 in, 99.5% alumina. 4. Include SZ-prefix devices where applicable. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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