NUP2114 Series, SNUP2114 ESD Protection Diode Low Capacitance ESD Protection for High Speed Data The NUP2114 surge protection is designed to protect high speed data lines from ESD. Ultralow capacitance and high level of ESD www.onsemi.com protection makes this device well suited for use in USB 2.0 applications. Features Low Capacitance 0.8 pF SOT553 TSOP6 Low Clamping Voltage CASE 463B CASE 318G Stand Off Voltage: 5 V Low Leakage V P ESD Rating of Class 3B (Exceeding 8 kV) per Human Body model and Class C (Exceeding 400 V) per Machine Model Protection for the Following IEC Standards: I/O I/O IEC 6100042 Level 4 ESD Protection UL Flammability Rating of 94 V0 S Prefix for Automotive and Other Applications Requiring Unique V N Site and Control Change Requirements AECQ101 Qualified and PPAP Capable MARKING DIAGRAMS These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant P2M M P2M Typical Applications 1 1 High Speed Communication Line Protection SOT553 TSOP6 USB 2.0 High Speed Data Line and Power Line Protection Monitors and Flat Panel Displays P2, P2M = Specific Device Code MP3 M = Date Code = PbFree Package Gigabit Ethernet (Note: Microdot may be in either location) Notebook Computers Digital Video Interface (DVI) and HDMI PIN CONNECTIONS MAXIMUM RATINGS (T = 25C unless otherwise noted) J V15 I/O P Rating Symbol Value Unit Operating Junction Temperature Range T 40 to +125 C 2 J V N Storage Temperature Range T 55 to +150 C stg 34 NC I/O Lead Solder Temperature T 260 C L Maximum (10 Seconds) SOT553 Human Body Model (HBM) ESD 16000 V Machine Model (MM) 400 16 I/O I/O IEC 6100042 Contact 13000 IEC6100042 Air 15000 25 V V N P Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be 34 assumed, damage may occur and reliability may be affected. NC NC See Application Note AND8308/D for further description of TSOP6 survivability specs. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: October, 2017 Rev. 3 NUP2114/DNUP2114 Series, SNUP2114 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM V V V C BR RWM V I Maximum Reverse Leakage Current V R RWM I V R F I T V Breakdown Voltage I BR T I Test Current T I Forward Current F V Forward Voltage I F F I PP P Peak Power Dissipation pk C Max. Capacitance V = 0 and f = 1.0 MHz R UniDirectional *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T =25C unless otherwise specified) J Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V (Note 1) 5.0 V RWM Breakdown Voltage V I = 1 mA, (Note 2) 5.5 7.5 V BR T Reverse Leakage Current I V = 5 V 0.01 1.0 A R RWM Clamping Voltage V I = 5 A (Note 3) 9.0 V C PP Clamping Voltage V I = 8 A (Note 3) 10 V C PP Maximum Peak Pulse Current I 12 A 8x20 s Waveform PP Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins and GND 0.8 1.0 pF J R Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins 0.5 pF J R Clamping Voltage V I = 1 A (Note 4) 12 V C PP Clamping Voltage V Per IEC 6100042 (Note 5) Figures 1 and 2 V C 1. Surge protection devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater RWM than the DC or continuous peak operating voltage level. 2. V is measured at pulse test current I . BR T 3. Nonrepetitive current pulse (Pin 5 to Pin 2) 4. Surge current waveform per Figure 5. 5. Typical waveform. For test procedure see Figures 3 and 4 and Application Note AND8307/D. 6. Include S-prefix devices where applicable. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2