NSQA6V8AW5T2G ON Semiconductor

ESD Protection Diode Single Line CAN/LIN Bus Protector NSQA6V8AW5T2 Series This integrated surge protection device (surge protection) is designed for applications requiring transient overvoltage protection. It is intended for use in sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and www.onsemi.com other applications. Its integrated design provides very effective and reliable protection for four separate lines using only one package. These devices are ideal for situations where board space is at a premium. 1 4 Features 2 Low Clamping Voltage Small SC88A SMT Package 3 5 Stand Off Voltage: 5 V Low Leakage Current < 1 A Four Separate Unidirectional Configurations for Protection ESD Protection: IEC6100042: Level 4 MILSTD 883C Method 30156: Class 3 These Devices are PbFree and are RoHS Compliant SC88A/SOT353 CASE 419A02 Benefits Provides Protection for ESD Industry Standards: IEC 61000, HBM Minimize Power Consumption of the System MARKING DIAGRAM Minimize PCB Board Space 45 Typical Applications 6x M Instrumentation Equipment Serial and Parallel Ports 132 Microprocessor Based Equipment x = H for NSQA6V8AW5T2 Notebooks, Desktops, Servers = X for NSQA12VAW5T2 Cellular and Portable Equipment M = Date Code = PbFree Package MAXIMUM RATINGS (T = 25C unless otherwise noted) A (Note: Microdot may be in either location) Rating Symbol Value Unit Peak Power Dissipation P 20 W PK 8 20 sec Double Exponential Waveform (Note 1) ORDERING INFORMATION Steady State Power 1 Diode (Note 2) P 380 mW D Thermal Resistance R JA Device Package Shipping JunctiontoAmbient 327 C/W Above 25C, Derate 3.05 mW/C NSQA6V8AW5T2G SC88A 3000/Tape & Reel (PbFree) Operating Junction Temperature T 40 to +125 C J Range NSQA12VAW5T2G SC88A 3000/Tape & Reel Storage Temperature Range T 55 to +150 C stg (PbFree) Lead Solder Temperature Maximum T 260 C L For information on tape and reel specifications, 10 Seconds Duration including part orientation and tape sizes, please IEC 100042 (ESD) Contact 8.0 kV refer to our Tape and Reel Packaging Specifications Stresses exceeding those listed in the Maximum Ratings table may damage the Brochure, BRD8011/D. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 6. 2. Only 1 diode under power. For all 4 diodes under power, P will be 25%. D Mounted on FR4 board with min pad. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: April, 2020 Rev. 7 NSQA6V8AW5T2/DNSQA6V8AW5T2 Series ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current V I R RWM T V Breakdown Voltage I BR T I Test Current T I Forward Current F I PP V Forward Voltage I F F UniDirectional P Peak Power Dissipation pk C Capacitance V = 0 and f = 1.0 MHz R *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit NSQA6V8AW5T2 Breakdown Voltage (I = 1 mA) (Note 3) V 6.4 6.8 7.1 V T BR Leakage Current (V = 5.0 V) I 1.0 A RWM R Clamping Voltage 1 (I = 1.6 A) (Note 4) V 13 V PP C Maximum Peak Pulse Current (Note 4) I 1.6 A PP Junction Capacitance (V = 0 V, f = 1 MHz) C 12 15 pF R J (V = 3.0 V, f = 1 MHz) 6.7 9.5 R Clamping Voltage Per IEC6100042 V Figures 1 and 2 V C NSQA12VAW5T2 Breakdown Voltage (I = 5 mA) (Note 3) V 11.4 12.0 12.7 V T BR Leakage Current (V = 9.0 V) I 0.05 A RWM R Zener Impedence (I = 5 mA) Z 30 T Z Clamping Voltage 1 (I = 0.9 A) (Note 4) V 23 V PP C Maximum Peak Pulse Current (Note 4) I 0.9 A PP Junction Capacitance (V = 0 V, f = 1 MHz) C 15 pF R J Clamping Voltage Per IEC6100042 (Note 5) V Figures 1 and 2 V C 3. V is measured at pulse test current I . BR T 4. Surge current waveform per Figure 5. 5. For test procedure see Figures 3 and 4 and Application Note AND8307/D. www.onsemi.com 2