NUP2301MW6T1G ON Semiconductor

NUP2301MW6T1G, SZNUP2301MW6T1G Low Capacitance Diode Array for ESD Protection in Two Data Lines NUP2301MW6T1G, SZNUP2301MW6T1G MAXIMUM RATINGS (Each Diode) (T = 25C unless otherwise noted) J Rating Symbol Value Unit Reverse Voltage V 70 Vdc R Forward Current I 200 mAdc F Peak Forward Surge Current I 500 mAdc FM(surge) Repetitive Peak Reverse Voltage V 70 V RRM Average Rectified Forward Current (Note 1) (Averaged over any 20 ms Period) I 715 mA F(AV) Repetitive Peak Forward Current I 450 mA FRM NonRepetitive Peak Forward Current I A FSM t = 1.0 s 2.0 t = 1.0 ms 1.0 t = 1.0 S 0.5 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR5 = 1.0 0.75 0.062 in. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance JunctiontoAmbient R 625 C/W JA Lead Solder Temperature T C L Maximum 10 Seconds Duration 260 Junction Temperature T 55 to +150 C J Storage Temperature T 55 to +150 C stg ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Each Diode) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage V Vdc (BR) (I = 100 A) 70 (BR) Reverse Voltage Leakage Current I Adc R (V = 70 Vdc) 2.5 R (V = 25 Vdc, T = 150C) 30 R J (V = 70 Vdc, T = 150C) 50 R J Capacitance (between I/O pins) C pF D (V = 0 V, f = 1.0 MHz) 1.0 2.0 R Capacitance (between I/O pin and ground) C pF D (V = 0 V, f = 1.0 MHz) 1.6 3 R Forward Voltage V mV F dc (I = 1.0 mAdc) 715 F (I = 10 mAdc) 855 F (I = 50 mAdc) 1000 F (I = 150 mAdc) 1250 F 2. FR5 = 1.0 0.75 0.062 in. 3. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 4. Include SZ-prefix devices where applicable.