X-On Electronics has gained recognition as a prominent supplier of NUP4102XV6T1G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. NUP4102XV6T1G ESD Suppressors / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

NUP4102XV6T1G ON Semiconductor

NUP4102XV6T1G electronic component of ON Semiconductor
NUP4102XV6T1G ON Semiconductor
NUP4102XV6T1G ESD Suppressors / TVS Diodes
NUP4102XV6T1G  Circuit Protection

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See Product Specifications
Part No. NUP4102XV6T1G
Manufacturer: ON Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ON Semiconductor TVS Diode Arrays MI ZNR QUAD ARRY
Datasheet: NUP4102XV6T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4000: USD 0.193 ea
Line Total: USD 772 
Availability - 3880
Ship by Wed. 09 Jul to Tue. 15 Jul
MOQ: 4000  Multiples: 4000
Pack Size: 4000
Availability Price Quantity
3880
Ship by Wed. 09 Jul to Tue. 15 Jul
MOQ : 4000
Multiples : 4000
4000 : USD 0.193
8000 : USD 0.1811
24000 : USD 0.1712

2997
Ship by Wed. 09 Jul to Tue. 15 Jul
MOQ : 1273
Multiples : 1
1273 : USD 0.2044

23280
Ship by Wed. 09 Jul to Tue. 15 Jul
MOQ : 1919
Multiples : 1
1919 : USD 0.2444
10000 : USD 0.2179
100000 : USD 0.1825

3880
Ship by Wed. 09 Jul to Tue. 15 Jul
MOQ : 4000
Multiples : 4000
4000 : USD 0.193
8000 : USD 0.1811
24000 : USD 0.1712

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Voltage
Peak Surge Current
Capacitance
Dimensions
Brand
Channels
Mounting Style
Peak Pulse Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NUP4102XV6T1G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NUP4102XV6T1G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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NUP4102XV6 6Pin BiDirectional Quad TVS Array This 6Pin bidirectional transient suppressor array is designed for applications requiring transient overvoltage protection capability. It is intended for use in transient voltage and ESD sensitive equipment NUP4102XV6 ELECTRICAL CHARACTERISTICS (T =25C, unless otherwise specified) J Parameter Conditions Symbol Min Typ Max Unit Reverse Working Voltage (Note 2) V 12 V RWM Breakdown Voltage I = 1 mA, (Note 3) V 13.6 17.8 V T BR Reverse Leakage Current V = 12 V I 10 100 nA RWM R Clamping Voltage I = 3 A, (8x20 sec V 25 V PP C Waveform) Maximum Peak Pulse Current 8x20 sec waveform I 3.0 A PP Capacitance V = 0 V, f=1 MHz C 13 15 pF R j (Line to GND) 2. TVS devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater than the DC RWM or continuous peak operating voltage level. 3. V is measured at pulse test current I Pulse Width 1 ms. BR T TYPICAL PERFORMANCE CURVES (T = 25C unless otherwise specified) J 110 110 WAVEFORM 100 100 PARAMETERS 90 90 t = 8 s r 80 80 t = 20 s d 70 70 ct 60 60 t = I /2 50 50 d PP 40 40 30 30 20 20 10 10 0 0 0 5 10 15 20 25 30 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (C) t, TIME ( s) A Figure 1. Pulse Waveform Figure 2. Power Derating Curve 14 24 t = 10 sec P 12 T = 25C A 22 10 20 8 18 6 16 4 14 2 0 12 0.1 1 10 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 I , SURGE CURRENT (A) V , REVERSE VOLTAGE (V) PP BR Figure 3. Clamping Voltage vs. Peak Pulse Figure 4. Junction Capacitance vs. Reverse Current (10 sec Square Wave Pulse) Voltage

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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