NUP8011MU ESD Protection Diode Array Low Clamping Voltage This integrated surge protection device is designed for applications requiring transient overvoltage protection. It is intended for use in sensitive equipment such as computers, printers, business machines, communication systems, and other applications. Its integrated design provides very effective and reliable protection for eight separate lines www.onsemi.com using only one package. These devices are ideal for situations where board space is at a premium. 1 8 Features Low Clamping Voltage UDFN Package, 1.2 x 1.8 mm 2 7 Standoff Voltage: 4.3 V Low Leakage Current IEC6100042, Level 4 ESD Protection 3 6 Moisture Sensitivity Level 1 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 4 5 Benefits Provides Protection for ESD Industry Standards: IEC 61000, HBM Protects the Line Against Transient Voltage Conditions (Top View) Minimize Power Consumption of the System Minimize PCB Board Space MARKING Applications 8 DIAGRAM ESD Protection for Data Lines 1 P3 M Wireless Phones UDFN8 1 Handheld Products CASE 517AD Notebook Computers P3 = Specific Device Code LCD Displays M = Month Code = PbFree Package MAXIMUM RATINGS (T = 25C unless otherwise noted) A Characteristic Symbol Value Unit Steady State Power 1 Diode (Note 1) P 380 mW D PIN CONNECTIONS Thermal Resistance, R 327 C/W JA JunctiontoAmbient 3.05 mW/C 14 Above 25C, Derate Maximum Junction Temperature T 150 C Jmax Operating Temperature Range T 40 to +85 C OP Storage Temperature Range T 55 to +150 C stg Lead Solder Temperature (10 seconds T 260 C L duration) 8 5 IEC 6100042 (ESD)Contact 8.0 kV Machine Model Class C MM 400 V ORDERING INFORMATION Human Body Model Class 3B HBM 8.0 kV Stresses exceeding those listed in the Maximum Ratings table may damage the Device Package Shipping device. If any of these limits are exceeded, device functionality should not be NUP8011MUTAG UDFN8 3000 / Tape & Reel assumed, damage may occur and reliability may be affected. 1. Only 1 diode under power. For all 4 diodes under power, P will be 25%. (PbFree) D Mounted on FR 4 board with min pad. For information on tape and reel specifications, See Application Note AND8308/D for further description of including part orientation and tape sizes, please survivability specs. refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: November, 2017 Rev. 4 NUP8011MU/DNUP8011MU ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current V I R RWM T V Breakdown Voltage I BR T I Test Current T I Forward Current F I PP V Forward Voltage I F F UniDirectional P Peak Power Dissipation pk C Capacitance V = 0 and f = 1.0 MHz R *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C) A Typ Capacitance Typ Capacitance Breakdown Voltage Leakage Current 0 V Bias (pF) 3 V Bias (pF) V 1 mA (V) I V (Note 2) (Note 2) V BR RM RM C Device I Per IEC6100042 RWM (Note 3) Marking Min Nom Max V ( A) Typ Max Typ Max Device RWM NUP8011MUTAG P3 6.47 6.8 7.14 4.3 1.0 12 14 6.7 9.5 Figures 1 and 2 (See Below) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Capacitance of one diode at f = 1 MHz, V = 0 V, T = 25C R A 3. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2