X-On Electronics has gained recognition as a prominent supplier of NV25020DWHFT3G EEPROM across the USA, India, Europe, Australia, and various other global locations. NV25020DWHFT3G EEPROM are a product manufactured by ON Semiconductor. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

NV25020DWHFT3G ON Semiconductor

NV25020DWHFT3G electronic component of ON Semiconductor
NV25020DWHFT3G ON Semiconductor
NV25020DWHFT3G EEPROM
NV25020DWHFT3G  Semiconductors

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See Product Specifications
Part No. NV25020DWHFT3G
Manufacturer: ON Semiconductor
Category: EEPROM
Description: EEPROM 2KB SPI SER CMOS EE PROM S
Datasheet: NV25020DWHFT3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4 ea
Line Total: USD 0.4 
Availability - 5206
Ship by Wed. 19 Feb to Fri. 21 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5206
Ship by Wed. 19 Feb to Fri. 21 Feb
MOQ : 1
Multiples : 1
1 : USD 0.4
10 : USD 0.38
100 : USD 0.3243
3000 : USD 0.231
9000 : USD 0.2255
45000 : USD 0.2244

   
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We are delighted to provide the NV25020DWHFT3G from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NV25020DWHFT3G and other electronic components in the EEPROM category and beyond.

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NV25010, NV25020, NV25040 EEPROM Serial 1/2/4-Kb SPI Automotive Grade 0 Description NV25010, NV25020 and NV25040 are EEPROM Serial 1/2/4 Kb www.onsemi.com SPI Automotive Grade 0 devices internally organized as 128x8, 256x8 and 512x8 bits. They feature a 16byte page write buffer and support the Serial Peripheral Interface (SPI) protocol. The devices are enabled through a Chip Select (CS) input. In addition, the required bus signals SOIC8 TSSOP8 are clock input (SCK), data input (SI) and data output (SO) lines. The DW SUFFIX DT SUFFIX HOLD input may be used to pause any serial communication with the CASE 751BD CASE 948AL NV250x0 device. The device features software and hardware write protection, including partial as well as full array protection. Byte PIN CONFIGURATION Level OnChip ECC (Error Correction Code) makes the device suitable for high reliability applications. The device offers an 1 CS V CC additional Identification Page which can be permanently write SO HOLD protected. SCK WP Features V SI SS Automotive AECQ100 Grade 0 (40C to +150C) Qualified SOIC (DW), TSSOP (DT) 2.5 V to 5.5 V Supply Voltage Range 10 MHz SPI Compatible V CC SPI Modes (0,0) & (1,1) 16byte Page Write Buffer SI Selftimed Write Cycle CS Hardware and Software Protection NV250x0 SO WP Additional Identification Page with Permanent Write Protection HOLD NV Prefix for Automotive and Other Applications Requiring Site and SCK Change Control Block Write Protection V SS 1 1 Protect / , / or Entire EEPROM Array 4 2 Figure 1. Functional Symbol Low Power CMOS Technology Program/Erase Cycles: PIN FUNCTION 4,000,000 at 25C Pin Name Function 1,200,000 at +85C 600,000 at +125C CS Chip Select 300,000 at +150C SO Serial Data Output 200 Year Data Retention WP Write Protect SOIC and TSSOP 8lead Packages V Ground SS This Device is PbFree, Halogen Free/BFR Free, and RoHS SI Serial Data Input Compliant SCK Serial Clock HOLD Hold Transmission Input V Power Supply CC ORDERING INFORMATION See detailed ordering and shipping information on page 10 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: April, 2019 Rev. 2 NV25010/DNV25010, NV25020, NV25040 Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Operating Temperature 45 to +150 C Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Test Condition Max Units NEND Endurance T 25C 4,000,000 Write Cycles A (Note 3) T = 85C 1,200,000 A T = 125C 600,000 A T = 150C 300,000 A TDR Data Retention T = 25C 200 Year A 2. Determined through qualification/characterization. 3. A Write Cycle refers to writing a Byte, a Page, the Status Register or the Identification Page. Table 3. DC OPERATING CHARACTERISTICS (V = 2.5 V to 5.5 V, T = 40C to +150C, unless otherwise specified.) CC A Symbol Parameter Test Conditions Min Max Unit I Supply Current Read, SO open f = 10 MHz 3 mA CCR SCK (Read Mode) I Supply Current Write, CS = V 2 mA CCW CC (Write Mode) I Standby Current V = GND or V , T = 40C to +125C 3 A SB1 IN CC A CS = V , WP = V , CC CC T = 40C to +150C 5 A HOLD = V , V = 5.5 V A CC CC I Standby Current V = GND or V , T = 40C to +125C 5 A SB2 IN CC A CS = V , WP = GND, CC T = 40C to +150C 10 A HOLD = GND, V = 5.5 V A CC I Input Leakage Current V = GND or V 2 2 A L IN CC I Output Leakage Current CS = V , V = GND or V 2 2 A LO CC OUT CC V Input Low Voltage 0.5 0.3 V V IL1 CC V Input High Voltage 0.7 V V + 0.5 V IH1 CC CC V Output Low Voltage I = 3.0 mA 0.4 V OL1 OL V Output High Voltage I = 1.6 mA V 0.8 V V OH1 OH CC V Internal PowerOn 0.6 1.5 V PORth Reset Threshold Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Table 4. PIN CAPACITANCE (T = 25C, f = 1.0 MHz, V = +5.0 V) (Note 2) A CC Symbol Test Conditions Min Typ Max Unit C Output Capacitance (SO) V = 0 V 8 pF OUT OUT C Input Capacitance (CS, SCK, SI, WP, HOLD) V = 0 V 8 pF IN IN www.onsemi.com 2

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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