X-On Electronics has gained recognition as a prominent supplier of NV25160DWHFT3G EEPROM across the USA, India, Europe, Australia, and various other global locations. NV25160DWHFT3G EEPROM are a product manufactured by ON Semiconductor. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

NV25160DWHFT3G ON Semiconductor

NV25160DWHFT3G electronic component of ON Semiconductor
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See Product Specifications
Part No.NV25160DWHFT3G
Manufacturer: ON Semiconductor
Category: EEPROM
Description: EEPROM 16KB SPI SER CMOS E EPROM
Datasheet: NV25160DWHFT3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8256 ea
Line Total: USD 0.83 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.3888
6000 : USD 0.3849
9000 : USD 0.381
12000 : USD 0.3772
15000 : USD 0.3735
24000 : USD 0.3698
30000 : USD 0.366
45000 : USD 0.3624
75000 : USD 0.3587

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.6385
6000 : USD 0.6243
9000 : USD 0.6103

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8256
10 : USD 0.7681
100 : USD 0.6506
500 : USD 0.6409
1000 : USD 0.5816
3000 : USD 0.5478

   
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We are delighted to provide the NV25160DWHFT3G from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NV25160DWHFT3G and other electronic components in the EEPROM category and beyond.

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NV25080, NV25160, NV25320, NV25640 EEPROM Serial 8/16/32/64-Kb SPI Automotive Grade 0 www.onsemi.com Description NV25080, NV25160, NV25320, NV25640 are a EERPOM Serial 8/16/32/64Kb SPI Automotive Grade 0 devices internally organized as 1K/2K/4K/8Kx8 bits. It features a 32byte page write buffer and supports the Serial Peripheral Interface (SPI) protocol. The device is SOIC8 TSSOP8 enabled through a Chip Select (CS) input. In addition, the required bus DW SUFFIX DT SUFFIX CASE 751BD CASE 948AL signals are clock input (SCK), data input (SI) and data output (SO) lines. The HOLD input may be used to pause any serial communication with the NV25xxx device. The device features PIN CONFIGURATION software and hardware write protection, including partial as well as 1 CS V CC full array protection. Byte Level OnChip ECC (Error Correction Code) makes the device suitable for high reliability applications. The SO HOLD device offers an additional Identification Page which can be SCK WP permanently write protected. V SI SS Features SOIC (DW), TSSOP (DT) Automotive AECQ100 Grade 0 (40C to +150C) Qualified 2.5 V to 5.5 V Supply Voltage Range V CC 10 MHz SPI Compatible SPI Modes (0,0) & (1,1) SI 32byte Page Write Buffer CS NV25xxx SO WP Selftimed Write Cycle HOLD Hardware and Software Protection SCK Additional Identification Page with Permanent Write Protection NV Prefix for Automotive and Other Applications Requiring Site and V SS Change Control Figure 1. Functional Symbol Block Write Protection 1 1 Protect / , / or Entire EEPROM Array 4 2 PIN FUNCTION Low Power CMOS Technology Program/Erase Cycles: Pin Name Function 4,000,000 at 25C CS Chip Select 1,200,000 at +85C SO Serial Data Output 600,000 at +125C WP Write Protect 300,000 at +150C 200 Year Data Retention V Ground SS SOIC, TSSOP 8lead Packages SI Serial Data Input This Device is PbFree, Halogen Free/BFR Free, and RoHS SCK Serial Clock Compliant HOLD Hold Transmission Input V Power Supply CC ORDERING INFORMATION See detailed ordering and shipping information on page 11 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: April, 2019 Rev. 2 NV25080/DNV25080, NV25160, NV25320, NV25640 Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Operating Temperature 45 to +150 C Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Test Condition Max Units NEND Endurance T 25C 4,000,000 Write Cycles A (Note 3) T = 85C 1,200,000 A T = 125C 600,000 A T = 150C 300,000 A TDR Data Retention T = 25C 200 Year A 2. Determined through qualification/characterization. 3. A Write Cycle refers to writing a Byte, a Page, the Status Register or the Identification Page. Table 3. DC OPERATING CHARACTERISTICS (V = 2.5 V to 5.5 V, T = 40C to +150C, unless otherwise specified.) CC A Symbol Parameter Test Conditions Min Max Units Read, SO open f = 10 MHz 3 mA SCK I Supply Current Write, CS = V 2 mA CCW CC (Write Mode) Write, CS = V 2 mA CC I Standby Current V = GND or V , T = 40C to +125C 3 A SB1 IN CC A CS = V , WP = V , CC CC T = 40C to +150C 7 A HOLD = V , V = 5.5 V A CC CC I Standby Current V = GND or V , T = 40C to +125C 5 A SB2 IN CC A CS = V , WP = GND, CC T = 40C to +150C 10 A HOLD = GND, V = 5.5 V A CC I Input Leakage Current V = GND or V 2 2 A L IN CC I Output Leakage Current CS = V , V = GND or V 2 2 A LO CC OUT CC V Input Low Voltage 0.5 0.3 V V IL1 CC V Input High Voltage 0.7 V V + 0.5 V IH1 CC CC V Output Low Voltage I = 3.0 mA 0.4 V OL1 OL V Output High Voltage I = 1.6 mA V 0.8 V V OH1 OH CC V Internal PowerOn 0.6 1.5 V PORth Reset Threshold Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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