EEPROM Serial 1/2/4-Kb SPI Automotive Grade 1 in Wettable Flank UDFN8 Package NV25010MUW, www.onsemi.com NV25020MUW, NV25040MUW 1 Description UDFN8 The NV25010/20/40 are a EEPROM Serial 1/2/4 Kb SPI (Wettable Flank) Automotive Grade 1 devices internally organized as MUW3 SUFFIX CASE 517DH 128x8/256x8/512x8 bits. They feature a 16byte page write buffer and support the Serial Peripheral Interface (SPI) protocol. The device is enabled through a Chip Select (CS) input. In addition, the required bus PIN CONFIGURATIONS signals are a clock input (SCK), data input (SI) and data output (SO) lines. The HOLD input may be used to pause any serial V CS 1 CC communication with the NV25010/20/40 device. These devices SO HOLD feature software and hardware write protection, including partial as WP SCK well as full array protection. V SI SS UDFN8 (MUW3) Features (Top View) Automotive AECQ100 Grade 1 (40C to +125C) Qualified 10 MHz SPI Compatible PIN FUNCTION 1.8 V to 5.5 V Supply Voltage Range Pin Name Function SPI Modes (0,0) & (1,1) 16byte Page Write Buffer CS Chip Select Selftimed Write Cycle SO Serial Data Output Hardware and Software Protection WP Write Protect Block Write Protection V Ground SS Protect 1/4, 1/2 or Entire EEPROM Array SI Serial Data Input Low Power CMOS Technology SCK Serial Clock 1,000,000 Program/Erase Cycles HOLD Hold Transmission Input 100 Year Data Retention V Power Supply CC Wettable Flank UDFN 8pad Package These Devices are PbFree, Halogen Free/BFR Free, and RoHS Compliant ORDERING INFORMATION V See detailed ordering and shipping information on page 9 of CC this data sheet. SI CS NV25010/20/40 SO WP HOLD SCK V SS Figure 1. Functional Symbol Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: July, 2020 Rev. 3 NV25010MUW/DNV25010MUW, NV25020MUW, NV25040MUW Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Unit Operating Temperature 45 to +130 C Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to V + 0.5 V CC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Unit N (Note 3) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR Table 3. DC OPERATING CHARACTERISTICS (V = 1.8 V to 5.5 V, T = 40C to +125C, unless otherwise specified.) CC A Symbol Parameter Test Conditions Min Max Unit I Supply Current (Read Mode) Read, V = 5.5 V, 10 MHz, SO open 2 mA CCR CC I Supply Current (Write Mode) Write, V = 5.5 V, 10 MHz, SO open 2 mA CCW CC I Standby Current V = GND or V , CS = V , 2 A SB1 IN CC CC WP = V , V = 5.5 V CC CC I Standby Current V = GND or V , CS = V , 5 A SB2 IN CC CC WP = GND, V = 5.5 V CC I Input Leakage Current V = GND or V 2 2 A L IN CC I Output Leakage Current CS = V , 1 2 A LO CC V = GND or V OUT CC V Input Low Voltage V 2.5 V 0.5 0.3 V V IL1 CC CC V Input High Voltage V 2.5 V 0.7 V V + 0.5 V IH1 CC CC CC V Input Low Voltage V < 2.5 V 0.5 0.2 V V IL2 CC CC V Input High Voltage V < 2.5 V 0.8 V V + 0.5 V IH2 CC CC CC V Output Low Voltage I = 3.0 mA 0.4 V OL OL V Output High Voltage I = 1.6 mA V 0.8 V V OH OH CC Table 4. PIN CAPACITANCE (Note 2) (T = 25C, f = 1.0 MHz, V = +5.0 V) A CC Symbol Test Conditions Min Typ Max Unit C Output Capacitance (SO) V = 0 V 8 pF OUT OUT C Input Capacitance (CS, SCK, SI, WP, HOLD) V = 0 V 8 pF IN IN 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Page Mode, V = 5 V, 25C. CC www.onsemi.com 2