X-On Electronics has gained recognition as a prominent supplier of NUS5530MNR2G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NUS5530MNR2G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NUS5530MNR2G ON Semiconductor

Name: NUS5530MNR2G
Brand: ON Semiconductor
SKU: NUS5530MNR2G_ON_Semiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

NUS5530MNR2G electronic component of ON Semiconductor

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Part No.	NUS5530MNR2G
Manufacturer:	ON Semiconductor
Category:	MOSFETs
Description:	ON Semiconductor MOSFET INTEGRATED POWER BJT
Datasheet:	NUS5530MNR2G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.8223 ea
Line Total: USD 1.82

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

NUS5530MNR2G More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 18 Apr to Thu. 24 Apr MOQ : 3000 Multiples : 3000	3000 : USD 0.8104

0 Ship by Fri. 18 Apr to Thu. 24 Apr MOQ : 510 Multiples : 510	510 : USD 0.7997

0 Ship by Wed. 16 Apr to Fri. 18 Apr MOQ : 1 Multiples : 1	1 : USD 1.8223 10 : USD 1.6005 100 : USD 1.3533 500 : USD 1.2965 1000 : USD 1.0804 3000 : USD 0.6972

We are delighted to provide the NUS5530MNR2G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NUS5530MNR2G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

NUS5530MN Integrated Power MOSFET with PNP Low V CE(sat) Switching Transistor This integrated device represents a new level of safety and boardspace reduction by combining the 20 V PChannel FET with a NUS5530MN MAXIMUM RATINGS FOR PNP TRANSISTORS (T = 25C) A Rating Symbol Max Unit Collector-Emitter Voltage V 35 Vdc CEO Collector-Base Voltage V 55 Vdc CBO Emitter-Base Voltage V 5.0 Vdc EBO Collector Current Continuous I 2.0 Adc C Collector Current Peak I 7.0 A CM Electrostatic Discharge ESD HBM Class 3 MM Class C THERMAL CHARACTERISTICS FOR P CHANNEL FET Characteristic Symbol Typ Max Unit Maximum JunctiontoAmbient (Note 4) R C/W JA t 5 sec 40 50 Steady State 80 95 Maximum Junction toFoot (Drain) R 15 20 C/W JF Steady State THERMAL CHARACTERISTICS FOR PNP TRANSISTORS Characteristic Symbol Max Unit Total Device Dissipation P (Note 1) 635 mW D T = 25C A Derate above 25C 5.1 mW/C Thermal Resistance, Junction toAmbient 200 C/W R (Note 1) JA Total Device Dissipation P (Note 2) 1.35 W D T = 25C A Derate above 25C 11 mW/C Thermal Resistance, Junction toAmbient R (Note 2) 90 C/W JA Thermal Resistance, Junction toLead 1 R 15 C/W JL Total Device Dissipation (Single Pulse < 10 sec) P 2.75 W Dsingle (Notes 2 & 3) Junction and Storage Temperature Range T , T 55 to +150 C J stg 2 1. FR4 100 mm , 1 oz copper traces. 2 2. FR4 500 mm , 1 oz copper traces. 3. Thermal response.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer ON Semiconductor ON Semiconductor
Product Category MOSFETs MOSFETs
RoHS - XON y y
Id - Continuous Drain Current - 3.9 A - 3.9 A
Vds - Drain-Source Breakdown Voltage - 20 V - 20 V
Rds On - Drain-Source Resistance 200 Ohms 200 Ohms
Transistor Polarity p - channel p - channel
Vgs - Gate-Source Breakdown Voltage - 35 V - 35 V
Pd - Power Dissipation 635 mW 635 mW
Mounting Style smd/smt smd/smt
Package / Case DFN - 8 DFN - 8
Packaging Reel Reel
Technology si si
Vgs - Gate-Source Voltage - 35 V - 35 V
Series nus5530mn nus5530mn
Brand On Semiconductor On Semiconductor
Forward Transconductance - Min 12 s 12 s
Factory Pack Quantity : 3000 3000
Cnhts 8541210000 8541210000
Hts Code 8541210095 8541210095
Mxhts 85412101 85412101
Product Type mosfet mosfet
Subcategory Mosfets Mosfets
Taric 8541210000 8541210000