IPB180N04S4-00 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 0.98 mW DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-00 PG-TO263-7-3 4N0400 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I Continuous drain current T =25C, V =10V 180 A D C GS T =100C, C 180 2) V =10V GS 2) I T =25C 720 Pulsed drain current D,pulse C 2) E I =90A 1250 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I - 180 A AS V Gate source voltage - 20 V GS P T =25C Power dissipation 300 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg Rev. 1.1 page 1 2015-10-07IPB180N04S4-00 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 0.5 K/W thJC SMD version, device on PCB R minimal footprint - - 62 thJA 2 3) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I = 1mA 40 - - V (BR)DSS GS D V V =V , I =230A Gate threshold voltage 2.0 3.0 4.0 GS(th) DS GS D V =40V, V =0V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25C j V =18V, V =0V, DS GS - 1 20 2) T =85C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =10V, I =100A Drain-source on-state resistance - 0.8 0.98 m DS(on) GS D Rev. 1.1 page 2 2015-10-07