IPB180N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 1.7 m DS(on),max I 180 A D Features PG-TO263-7-3 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low R DSon Ultra high I D Type Package Marking IPB180N06S4-H1 PG-TO263-7-3 4N06H1 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I T =25C, V =10V 180 A Continuous drain current D C GS 2) 180 T =100C, V =10V C GS 2) I T =25C 720 Pulsed drain current D,pulse C 2) E I =90A 700 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 180 A AS Gate source voltage V - 20 V GS Power dissipation P T =25C 250 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2009-03-25 IPB180N06S4-H1 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 0.60 K/W thJC R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 60 - - V (BR)DSS GS D V V =V , I =200A Gate threshold voltage 2.0 3.0 4.0 GS(th) DS GS D V =60V, V =0V, DS GS I Zero gate voltage drain current - 0.03 1 A DSS T =25C j V =60V, V =0V, DS GS - 10 200 2) T =125C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =10V, I =100A Drain-source on-state resistance - 1.3 1.7 m DS(on) GS D Rev. 1.0 page 2 2009-03-25