IPB17N25S3-100 IPP17N25S3-100 OptiMOS -T Power-Transistor Product Summary V 250 V DS R 100 m DS(on),max I A 17 D Features PG-TO263-3-2 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB17N25S3-100 PG-TO263-3-2 3N25100 IPP17N25S3-100 PG-TO220-3-1 3N25100 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C, V =10 V Continuous drain current 17 A D C GS 1) 13.3 T =100C, V =10V C GS 1) I T =25C 68 Pulsed drain current D,pulse C 1) E I =5.4A 54 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 5.4 A AS Reverse diode dv /dt dv /dt- 6kV/s Gate source voltage V-20V GS P T =25C Power dissipation 107 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.1 page 1 2013-05-13IPB17N25S3-100 IPP17N25S3-100 Values Parameter Symbol Conditions Unit min. typ. max. 1) Thermal characteristics Thermal resistance, junction - case R---1.4K/W thJC Thermal resistance, junction - R ---62 thJA ambient, leaded R SMD version, device on PCB minimal footprint - - 62 thJA 2 2) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 250 - - V (BR)DSS GS D V V =V , I =54A Gate threshold voltage 2.0 3.0 4.0 GS(th) DS GS D Zero gate voltage drain current I V =250V, V =0V -0.01 1 A DSS DS GS V =250V, V =0V, DS GS - 1 100 2) T =125C j I V =20V, V =0V Gate-source leakage current - 10 100 nA GSS GS DS Drain-source on-state resistance R V =10V, I =17A - 85 100 m DS(on) GS D Rev. 1.1 page 2 2013-05-13