NUP4103FCT1G ON Semiconductor

NUP4103FC ESD Protection Diode Array, 4-Channel This integrated surge protection device is designed for applications requiring transient overvoltage protection. It is intended for use in sensitive portable equipment and other applications. Its integrated www.onsemi.com design provides very effective and reliable protection for four (4) separate lines using only one package. These devices are ideal for situations where board space is a premium. CIRCUIT DESCRIPTION Features A1 C1 Unidirectional, Quad ESD Protection Ultrasmall FlipChip Packaging (0.95 mm x 1.33 mm) Compliance with IEC6100042 (Level 4) Requirements B2 Maximum Leakage Current of 100 nA at 3.3 V PbFree Package is Available* A3 C3 Benefits Protects Four Data Lines from ESD while Reducing Component Count MARKING DIAGRAM Small Package Saves on PCB Real Estate 1 Provides Protection for ESD Industry Standards, IEC 61000, HBM and MM E M 5PIN FLIPCHIP CSP Low Leakage Capability Minimizes Power Loss in the System PLASTIC CASE 766AB Applications E = Specific Device Code M = Date Code ESD Protection for Portable Equipment = PbFree Package Cell Phones (Note: Microdot may be in either location) MP3 Players PDAs TOP VIEW BOTTOM VIEW (Bumps Down) (Bumps Up) 1233 2 1 MAXIMUM RATINGS A A Rating Symbol Value Unit ESD Discharge IEC6100042, V kV PP Air Discharge 30 B B Contact Discharge 30 16 Human Body Model 1.6 C C Machine Model Junction Temperature T 150 C J ORDERING INFORMATION Operating Ambient Temperature Range T 40 to +85 C A Device Package Shipping Storage Temperature Range T 55 to +150 C STG Stresses exceeding those listed in the Maximum Ratings table may damage the NUP4103FCT1 FlipChip 3000/Tape & Reel device. If any of these limits are exceeded, device functionality should not be NUP4103FCT1G FlipChip 3000/Tape & Reel assumed, damage may occur and reliability may be affected. (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: October, 2017 Rev. 3 NUP4103FC/DNUP4103FC ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Conditions Min Typ Max Unit Reverse StandOff Voltage V I = 10 A (Note 1) 5.5 V RWM RWM Breakdown Voltage V I = 1.0 mA (Note 2) 6.0 7.0 8.0 V BR T Leakage Current I V = 3.3 V per line 100 nA R RM Junction Capacitance C V = 2.5 V, f = 1 MHz 30 pF J R 1. Surge protection devices are normally selected according to the working peak reverse voltage (V ) which should be equal or greater RWM than the DC or continuous peak operating voltage level. 2. V is measured at pulse test current I . BR T TYPICAL PERFORMANCE CURVES (T = 25C unless otherwise specified) J 50 100.0E9 45 10.0E9 40 35 1.0E9 30 100.0E12 25 20 10.0E12 0 12 34 5 40 15 10 35 60 85 V , Reverse Voltage (V) T, Temperature (C) R Figure 1. Reverse Voltage vs Junction Capacitance Figure 2. Reverse Leakage Current vs Junction Temperature www.onsemi.com 2 C, Capacitance (pF) I , Leakage Current (A) R