X-On Electronics has gained recognition as a prominent supplier of NUP5150MUTBG ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. NUP5150MUTBG ESD Suppressors / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

NUP5150MUTBG ON Semiconductor

NUP5150MUTBG electronic component of ON Semiconductor
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Part No.NUP5150MUTBG
Manufacturer: ON Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ON Semiconductor TVS Diode Arrays 5 LINE SUPPRESSOR ARRAY
Datasheet: NUP5150MUTBG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1687
Multiples : 1687
1687 : USD 0.2493
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.8232
10 : USD 0.6846
100 : USD 0.3181
1000 : USD 0.2672
3000 : USD 0.2457
9000 : USD 0.2457
24000 : USD 0.2369
45000 : USD 0.2331
99000 : USD 0.2281
N/A

Obsolete
0
MOQ : 300
Multiples : 1
300 : USD 0.3299
500 : USD 0.3179
N/A

Obsolete
   
Manufacturer
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RoHS - XON
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Vesd - Voltage ESD Contact
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Cd - Diode Capacitance
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Maximum Operating Temperature
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We are delighted to provide the NUP5150MUTBG from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NUP5150MUTBG and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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NUP5150MU ESD Protection Diode Array, 5-Line This 5line surge protection array is designed for applications requiring surge protection capability. It is intended for use in overtransient voltage and ESD sensitive equipment such as cell www.onsemi.com phones, portables, computers, printers and other applications. This device features a monolithic common anode design which protects five independent lines in a single UDFN package. This device is ideal UDFN6 5LINE SURGE for situations where board space is at a premium. PROTECTION Features PIN ASSIGNMENT Protects up to 5 Lines in a Single UDFN Package ESD Rating of Class 3B (Exceeding 8 kV) per Human Body Model 1 6 Compliance with IEC 6100042 This is a PbFree Device 2 5 Applications 3 4 Hand Held Portable Applications PIN 1. CATHODE Serial and Parallel Ports 2. ANODE Notebooks, Desktops, Servers 3. CATHODE 4. CATHODE 5. CATHODE MAXIMUM RATINGS (T = 25C, unless otherwise specified) 6. CATHODE J Symbol Rating Value Unit T Operating Junction Temperature Range 40 to 125 C J MARKING DIAGRAM T Storage Temperature Range 55 to 150 C STG UDFN6 T Lead Solder Temperature Maximum 260 C L 5 M CASE 517AA (10 seconds) 1 ESD Human Body Model (HBM) 16000 V IEC 6100042 Contact (ESD) 8000 5 = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the M = Month Code device. If any of these limits are exceeded, device functionality should not be *Specific Device Code orientation may vary assumed, damage may occur and reliability may be affected. depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping NUP5150MUTBG UDFN6 3000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2010 1 Publication Order Number: November, 2017 Rev. 2 NUP5150/DNUP5150MU ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise specified) J Parameter Conditions Symbol Min Typ Max Unit Reverse Working Voltage (Note 1) V 5.0 V RWM Breakdown Voltage I = 1 mA, (Note 2) V 6.2 6.8 7.2 V T BR Reverse Leakage Current V = 3 V I 0.1 A RWM R Capacitance V = 0 V, f = 1 MHz (Line to GND) C 12 15 pF R J 1. Surge protection devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater RWM than the DC or continuous peak operating voltage level. 2. V is measured at pulse test current I . BR T www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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