NUP5150MU ESD Protection Diode Array, 5-Line This 5line surge protection array is designed for applications requiring surge protection capability. It is intended for use in overtransient voltage and ESD sensitive equipment such as cell www.onsemi.com phones, portables, computers, printers and other applications. This device features a monolithic common anode design which protects five independent lines in a single UDFN package. This device is ideal UDFN6 5LINE SURGE for situations where board space is at a premium. PROTECTION Features PIN ASSIGNMENT Protects up to 5 Lines in a Single UDFN Package ESD Rating of Class 3B (Exceeding 8 kV) per Human Body Model 1 6 Compliance with IEC 6100042 This is a PbFree Device 2 5 Applications 3 4 Hand Held Portable Applications PIN 1. CATHODE Serial and Parallel Ports 2. ANODE Notebooks, Desktops, Servers 3. CATHODE 4. CATHODE 5. CATHODE MAXIMUM RATINGS (T = 25C, unless otherwise specified) 6. CATHODE J Symbol Rating Value Unit T Operating Junction Temperature Range 40 to 125 C J MARKING DIAGRAM T Storage Temperature Range 55 to 150 C STG UDFN6 T Lead Solder Temperature Maximum 260 C L 5 M CASE 517AA (10 seconds) 1 ESD Human Body Model (HBM) 16000 V IEC 6100042 Contact (ESD) 8000 5 = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the M = Month Code device. If any of these limits are exceeded, device functionality should not be *Specific Device Code orientation may vary assumed, damage may occur and reliability may be affected. depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping NUP5150MUTBG UDFN6 3000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2010 1 Publication Order Number: November, 2017 Rev. 2 NUP5150/DNUP5150MU ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise specified) J Parameter Conditions Symbol Min Typ Max Unit Reverse Working Voltage (Note 1) V 5.0 V RWM Breakdown Voltage I = 1 mA, (Note 2) V 6.2 6.8 7.2 V T BR Reverse Leakage Current V = 3 V I 0.1 A RWM R Capacitance V = 0 V, f = 1 MHz (Line to GND) C 12 15 pF R J 1. Surge protection devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater RWM than the DC or continuous peak operating voltage level. 2. V is measured at pulse test current I . BR T www.onsemi.com 2