DATA SHEET www.onsemi.com ESD Protection Diode 5 Low Clamping Voltage 1 6 3 4 NUP4114 Series The NUP4114 ESD protection diode array is designed to protect high speed data lines from ESD. Ultralow capacitance and high level of ESD protection make these devices well suited for use in USB 2.0 2 high speed applications. MARKING Features DIAGRAMS Low Clamping Voltage Low Capacitance (<0.6 pF Typical, I/O to GND) 6 Low Leakage SC88 X2 M W1 SUFFIX Response Time is Typically < 1.0 ns CASE 419B 1 IEC6100042 Level 4 ESD Protection 1 SZ Prefix for Automotive and Other Applications Requiring Unique 6 Site and Control Change Requirements AECQ101 Qualified and PPAP Capable SC88 X4 M W1 SUFFIX These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1 CASE 419B Compliant 1 Typical Applications 6 LVDS TSOP6 P4H M CASE 318G USB 2.0 High Speed Data Line and Power Line Protection STYLE 12 1 Digital Video Interface (DVI) and HDMI 1 Gigabit Ethernet Monitors and Flat Panel Displays 6 SOT563 P4M Notebook Computers CASE 463A 1 1 MAXIMUM RATINGS (T = 25C unless otherwise noted) J XXX = Specific Device Code Rating Symbol Value Unit M = Date Code = PbFree Package Operating Junction Temperature Range T 40 to +125 C J (Note: Microdot may be in either location) Storage Temperature Range T 55 to +150 C stg Lead Solder Temperature T 260 C L Maximum (10 Seconds) ORDERING INFORMATION See detailed ordering and shipping information in the package IEC 6100042 Contact ESD 8 kV dimensions section on page 4 of this data sheet. IEC 6100042 Air 15 ISO 10605 330 pF / 330 Contact 10 ISO 10605 330 pF / 2 k Contact 21 ISO 10605 150 pF / 2 k Contact 30 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: December, 2021 Rev. 8 NUP4114/DNUP4114 Series ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM V V V C BR RWM V I Maximum Reverse Leakage Current V R RWM I V R F I T V Breakdown Voltage I BR T I Test Current T I Forward Current F V Forward Voltage I I F F PP P Peak Power Dissipation pk C Capacitance V = 0 and f = 1.0 MHz UniDirectional R *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V 5.5 V RWM Breakdown Voltage V I = 1 mA, (Note 1) 5.5 6.5 V BR T Reverse Leakage Current I V = 5.5 V 1.0 A R RWM Clamping Voltage V I = 1 A (Note 2) 8.3 10 V C PP I = 5 A (Note 3) 8.5 9.0 V PP I = 8 A (Note 3) 9.2 10 V PP ESD Clamping Voltage V Per IEC6100042 (Note 4) See Figures 1 & 2 C Maximum Peak Pulse Current I 8/20 s Waveform (Note 3) 12 A PP Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins and GND 0.6 pF J R V = 0 V, f = 1 MHz between I/O Pins 0.3 pF R 1. V is measured at pulse test current I . BR T 2. Nonrepetitive current pulse (I/O to GND). 3. Nonrepetitive current pulse (Pin 5 to Pin 2) 4. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2