X-On Electronics has gained recognition as a prominent supplier of NUP4212UPMUTAG ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. NUP4212UPMUTAG ESD Suppressors / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

NUP4212UPMUTAG ON Semiconductor

NUP4212UPMUTAG electronic component of ON Semiconductor
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Part No.NUP4212UPMUTAG
Manufacturer: ON Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes ULTR LO CAPACITANCE ESD PRTCT ARRAY
Datasheet: NUP4212UPMUTAG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9078 ea
Line Total: USD 0.91 
Availability - 2799
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2799
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.9078
10 : USD 0.7461
100 : USD 0.5971
250 : USD 0.5613
500 : USD 0.4539
1000 : USD 0.4516
3000 : USD 0.4169
6000 : USD 0.4169
9000 : USD 0.4008

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
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Brand
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NUP4212UPMUTAG from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NUP4212UPMUTAG and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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NUP4212UPMU ESD Protection Diode Array, Quad, Ultra-Low Capacitance The four line surge protection array is designed to protect voltagesensitive components that require ultralow capacitance from www.onsemi.com ESD and transient voltage events. This device features a common anode design which can protect up to four independent high speed data lines D D D D V V and 1 or 2 separate 15 V surge protection lines in a single sixlead 1 2 3 4 1 2 UDFN low profile package. Excellent clamping capability, low capacitance, low leakage, and fast response time make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, it is suited for use in high frequency designs such as a USB 2.0 high speed. This device can be configured as a dual port USB device. Features Low Capacitance Data Lines (0.7 pF Typical) MARKING Protects up to Four Data Lines Plus a V Pin CC DIAGRAM UDFN Package, 1.6 x 1.6 mm 1 UDFN6 1.6 X 1.6 6 P2 M Low Profile of 0.50 mm for Ultra Slim Design MU SUFFIX CASE 517AP 1 V , V Pin = 15 V Protection 1 2 D , D , D , and D Pins = 5.2 V Minimum Protection 1 2 3 4 P2 = Specific Device Code M = Date Code ESD Rating: IEC6100042: Level 4 = PbFree Package Contact (14 kV) (Note: Microdot may be in either location) This is a PbFree Device Typical Applications PIN CONNECTIONS USB 2.0 HighSpeed Interface Cell Phones D 6 V 1 1 2 MP3 Players GND D 2 5 V 1 2 SIM Card Protection D 3 4 D 3 4 MAXIMUM RATINGS (T = 25C, unless otherwise specified) J Symbol Rating Value Unit T Operating Junction Temperature Range 40 to 125 C J T Storage Temperature Range 55 to 150 C STG ORDERING INFORMATION T Lead Solder Temperature Maximum 260 C L Device Package Shipping (10 seconds) ESD IEC 6100042 Contact 14000 V NUP4212UPMUTAG UDFN6 3000/Tape & Reel (PbFree) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be For information on tape and reel specifications, assumed, damage may occur and reliability may be affected. including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: October, 2017 Rev. 2 NUP4212UPMU/DNUP4212UPMU ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage V V V C BR RWM RWM V I V R F I Maximum Reverse Leakage Current V R RWM I T V Breakdown Voltage I BR T I Test Current T I Forward Current F I PP V Forward Voltage I F F P Peak Power Dissipation UniDirectional pk C Max. Capacitance V = 0 and f = 1.0 MHz R *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise specified) J Parameter Conditions Symbol Min Typ Max Unit Reverse Working Voltage (D , D , D and D ) (Note 1) V 4.0 V 1 2 3, 4 RWM1 Reverse Working Voltage (V and V ) (Note 1) V 12 V 1 2 RWM2 Breakdown Voltage (D , D , D and D ) I = 1 mA, (Note 2) V 5.2 5.5 V 1 2 3, 4 T BR Breakdown Voltage (V , V ) I = 5 mA, (Note 2) V 13.5 15 15.8 V 1 2 T BR2 Reverse Leakage Current (D , D , D and D ) V I 1.0 A 1 2 3, 4 RWM1 R Reverse Leakage Current (V , V ) V I 1.0 A 1 2 RWM2 R Capacitance (D , D , D and D ) V = 0 V, f = 1 MHz (Line to GND) C 0.7 0.9 pF 1 2 3, 4 R J Clamping Voltage I = 1 A (Note 3) V 14.3 V PP C Clamping Voltage Per IEC6100042 (Note 4) V Figures 1 and 2 V C 1. Surge protection devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater RWM than the DC or continuous peak operating voltage level. 2. V is measured at pulse test current I . BR T 3. Surge current waveform per Figure 5. 4. Typical waveform. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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