X-On Electronics has gained recognition as a prominent supplier of NUP45V6P5T5G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. NUP45V6P5T5G ESD Suppressors / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

NUP45V6P5T5G ON Semiconductor

NUP45V6P5T5G electronic component of ON Semiconductor
NUP45V6P5T5G ON Semiconductor
NUP45V6P5T5G ESD Suppressors / TVS Diodes
NUP45V6P5T5G  Circuit Protection

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See Product Specifications
Part No. NUP45V6P5T5G
Manufacturer: ON Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes 5.6 V Quad Array
Datasheet: NUP45V6P5T5G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3375 ea
Line Total: USD 0.34 
Availability - 7694
Ship by Mon. 27 Jan to Wed. 29 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6749
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 245
Multiples : 1
245 : USD 0.2654
249 : USD 0.2613
253 : USD 0.2574
257 : USD 0.2534
261 : USD 0.2495
500 : USD 0.2455
1000 : USD 0.2416
3000 : USD 0.2284
6000 : USD 0.2245

7694
Ship by Mon. 27 Jan to Wed. 29 Jan
MOQ : 1
Multiples : 1
1 : USD 0.3375
10 : USD 0.2938
100 : USD 0.2472
500 : USD 0.2211
1000 : USD 0.209
2500 : USD 0.2035
8000 : USD 0.1925

1940
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 1814
Multiples : 1
1814 : USD 0.2688

752720
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 1814
Multiples : 1
1814 : USD 0.2688

6749
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 253
Multiples : 1
253 : USD 0.2574
257 : USD 0.2534
261 : USD 0.2495
500 : USD 0.2455
1000 : USD 0.2416
3000 : USD 0.2375
6000 : USD 0.2335

830320
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 1814
Multiples : 1
1814 : USD 0.2688

7760
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 1814
Multiples : 1
1814 : USD 0.2688

1171741
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 1814
Multiples : 1
1814 : USD 0.2688

15520
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 1814
Multiples : 1
1814 : USD 0.2688

566300
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 1814
Multiples : 1
1814 : USD 0.2688

   
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We are delighted to provide the NUP45V6P5T5G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NUP45V6P5T5G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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NUP45V6P5 ESD Protection Diode Array, Quad, Low Capacitance This integrated surge protection is designed for applications requiring transient overvoltage protection. It is intended to be used in sensitive equipment such as wireless headsets, PDAs, digital cameras, www.onsemi.com computers, printers, communication systems, and other applications. The integrated design provides very effective and reliable protection for four separate lines using only one package. This device is ideal for 1 5 situations where board space is at a premium. Features 2 ESD Protection: IEC6100042: Level 4 3 4 Four Separate Unidirectional Configurations for Protection Low Leakage Current < 1 A 3 V Small SOT953 SMT Package Low Capacitance These are PbFree Devices Benefits SOT953 Provides Protection for ESD Industry Standards: IEC 61000, HBM CASE 526AE Protects Four Lines Against Transient Voltage Conditions Minimize Power Consumption of the System MARKING DIAGRAM Minimize PCB Board Space Typical Applications 5 M Cellular and Portable Electronics 1 Serial and Parallel Ports 5 = Specific Device Code Microprocessor Based Equipment M = Date & Assembly Code Notebooks, Desktops, Servers ORDERING INFORMATION Device Package Shipping NUP45V6P5T5G SOT953 8000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: October, 2017 Rev. 4 NUP45V6P5/DNUP45V6P5 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current V I R RWM T V Breakdown Voltage I BR T I Test Current T V Maximum Temperature Coefficient of V BR BR I PP I Forward Current F UniDirectional V Forward Voltage I F F Z Maximum Zener Impedance I ZT ZT I Reverse Current ZK Z Maximum Zener Impedance I ZK ZK MAXIMUM RATINGS (T = 25C unless otherwise noted) A Characteristic Symbol Value Unit Thermal Resistance JunctiontoAmbient R 560 C/W JA Above 25C, Derate 4.5 mW/C Maximum Junction Temperature T 150 C Jmax Operating Junction and Storage Temperature Range T T 55 to +150 C J stg Lead Solder Temperature (10 seconds duration) T 260 C L Human Body Model (HBM) ESD 8000 V Machine Model (MM) 400 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (T = 25C) A Typ Capacitance Typ Capacitance V (V) C Breakdown Voltage Leakage Current 0 V Bias (pF) 3 V Bias (pF) I = 1 A PP V 1 mA (Volts) I V (Note 1) (Note 1) (Note 2) BR RM RM Device Marking Min Nom Max V I ( A) Typ Max Typ Max Max Device RWM RWM NUP45V6P5 5 5.3 5.6 5.9 3.0 1.0 13 17 7.0 11.5 10.5 1. Capacitance of one diode at f = 1 MHz, T = 25C. A 2. Surge current waveform per Figure 3. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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