NUP4302MR6T1G ON Semiconductor

NUP4302MR6 Schottky Diode Array for Four Data Line ESD Protection The NUP4302MR6 is designed to protect high speed data line interface from ESD, EFT and lighting. NUP4302MR6 MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit Peak Reverse Breakdown Voltage V 30 V BR Forward Power Dissipation (T = 25C) P 225 mW A F Forward Continuous Current I 200 mA F Junction Operating Temperature T 55 to +125 C J Storage Temperature Range T 55 to +150 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Conditions Min Typ Max Unit Reverse Breakdown Voltage V I = 100 A 30 V BR R Reverse Leakage I V = 25 V 30 A R R Forward Voltage V I = 0.1 mAdc 0.28 V F F Forward Voltage V I = 1.0 mAdc 0.35 V F F Forward Voltage V I = 10 mAdc 0.45 V F F Forward Voltage V I = 100 mAdc 1.00 V F F Total Capacitance C V = 0 V, f = 1.0 MHz, I/O to Ground 28 pF T R V = 0 V, f = 1.0 MHz, I/O to I/O 18 R Reverse Recovery Time t I = I = 10 mA, I = 1.0 mA (Figure 1) 5.0 ns rr F R R(REC) 820 +10 V 2 k 0.1 F I F t t t I r p F 100 H t t 0.1 F 10% rr DUT 90% 50 OUTPUT 50 INPUT i = 1 mA PULSE SAMPLING R(REC) I R GENERATOR OSCILLOSCOPE V R OUTPUT PULSE INPUT SIGNAL (I = I = 10 mA measured F R at i = 1 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit