NUP4201DR2G ON Semiconductor

NUP4201DR2 ESD Protection Diode Low Capacitance Surface Mount ESD Protection for HighSpeed Data Interfaces www.onsemi.com The NUP4201DR2 surge protection is designed to protect equipment attached to high speed communication lines from ESD, EFT, and lightning. SO8 LOW CAPACITANCE VOLTAGE SUPPRESSOR Features 500 WATTS PEAK POWER SO8 Package 6 VOLTS Peak Power 500 Watts 8 x 20 S ESD Rating: PIN CONFIGURATION IEC 6100042 (ESD) 15 kV (air) 8 kV (contact) AND SCHEMATIC IEC 6100044 (EFT) 40 A (5/50 ns) IEC 6100045 (lightning) 25 A (8/20 s) I/O 1 1 8 REF 2 UL Flammability Rating of 94 V0 REF 1 2 7 I/O 4 PbFree Package is Available REF 1 3 6 I/O 3 Typical Applications I/O 2 4 5 REF 2 High Speed Communication Line Protection USB Power and Data Line Protection SOIC8 Video Line Protection 8 CASE 751 Base Stations 1 PLASTIC HDSL, IDSL Secondary IC Side Protection Microcontroller Input Protection MARKING DIAGRAM MAXIMUM RATINGS 8 Rating Symbol Value Unit P4201 AYWW Peak Power Dissipation P 500 W pk 8 x 20 S T = 25C (Note 1) A 1 Junction and Storage Temperature Range T , T 55 to +150 C J stg Lead Solder Temperature T 260 C L P4201 = Device Code Maximum 10 Seconds Duration A = Assembly Location Stresses exceeding those listed in the Maximum Ratings table may damage the Y = Year device. If any of these limits are exceeded, device functionality should not be WW = Work Week assumed, damage may occur and reliability may be affected. = PbFree Package 1. Nonrepetitive current pulse 8 x 20 S exponential decay waveform (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping NUP4201DR2 SO8 2500/Tape & Reel NUP4201DR2G SO8 2500/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2008 1 Publication Order Number: October, 2017 Rev. 7 NUP4201DR2/DNUP4201DR2 ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage I = 1.0 mA V 6.0 V t BR Reverse Leakage Current V = 5.0 Volts I N/A 10 A RWM R Maximum Clamping Voltage I = 1.0 A, 8 x 20 S V N/A 9.8 V PP C Maximum Clamping Voltage I = 10 A, 8 x 20 S V N/A 12 V PP C Maximum Clamping Voltage I = 25 A, 8 x 20 S V N/A 25 V PP C Between I/O Pins and Ground DC Bias = 0 V, 1.0 MHz Capacitance 5.0 10 pF Between I/O Pins and I/O DC Bias = 0 V, 1.0 MHz Capacitance 2.5 5.0 pF ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V V V C BR RWM V I V V Working Peak Reverse Voltage R F RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I Test Current T I PP Maximum Temperature Coefficient of V V BR BR I Forward Current F UniDirectional V Forward Voltage I F F Z Maximum Zener Impedance I ZT ZT I Reverse Current ZK Z Maximum Zener Impedance I ZK ZK www.onsemi.com 2