NUP4012PMU ESD Protection Diode Array Quad, UltraLow Capacitance The four line surge protection array is designed to protect voltagesensitive components that require ultralow capacitance from ESD and transient voltage events. This device features a common anode design which protects four independent high speed data lines in a single www.onsemi.com sixlead UDFN low profile package. Excellent clamping capability, low capacitance, low leakage, and fast D D D D 1 2 3 4 response time make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, it is suited for use in high frequency designs. Features Low Capacitance Data Lines (0.7 pF Typical) Protects up to Four Data Lines UDFN Package, 1.6 x 1.6 mm Low Profile of 0.50 mm for Ultra Slim Design MARKING ESD Rating: IEC6100042: Level 4 DIAGRAM Contact (14 kV) 1 UDFN6 1.6x1.6 6 D , D , D and D Pins = 5.2 V Minimum Protection 1 2 3 4 P7 M MU SUFFIX RoHS Compliant CASE 517AP 1 This is a PbFree Device P7 = Specific Device Code Typical Applications M = Date Code USB 2.0 HighSpeed Interface = PbFree Package Cell Phones (Note: Microdot may be in either location) MP3 Players SIM Card Protection PIN CONNECTIONS MAXIMUM RATINGS (T = 25C, unless otherwise specified) J Symbol Rating Value Unit 6 D D 1 4 1 T Operating Junction Temperature Range 40 to 125 C J GND 2 5 NC NC T Storage Temperature Range 55 to 150 C STG D 3 4 D 2 3 T Lead Solder Temperature Maximum 260 C L (10 seconds) ESD IEC 6100042 Contact 14000 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping NUP4012PMUTAG UDFN6 3000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2008 1 Publication Order Number: October, 2017 Rev. 2 NUP4012PMU/DNUP4012PMU ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter I I Maximum Reverse Peak Pulse Current PP I F V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM I Maximum Reverse Leakage Current V R RWM V V V C BR RWM V Breakdown Voltage I BR T V I V R F I T I Test Current T I Forward Current F V Forward Voltage I F F I P Peak Power Dissipation PP pk C Max. Capacitance V = 0 and f = 1.0 MHz R UniDirectional ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise specified) J Parameter Conditions Symbol Min Typ Max Unit Reverse Working Voltage (D , D , D and D ) (Note 1) V 4.0 V 1 2 3 4 RWM Breakdown Voltage (D , D , D and D ) I = 1 mA, (Note 2) V 5.2 5.5 V 1 2 3 4 T BR Reverse Leakage Current (D , D , D and D ) V I 1.0 A 1 2 3 4 RWM R Capacitance (D , D , D and D ) V = 0 V, f = 1 MHz (Line to GND) C 0.7 0.9 pF 1 2 3 4 R J 1. Surge protection devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater RWM than the DC or continuous peak operating voltage level. 2. V is measured at pulse test current I . BR T Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2