X-On Electronics has gained recognition as a prominent supplier of NUP4016P5T5G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. NUP4016P5T5G ESD Suppressors / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

NUP4016P5T5G ON Semiconductor

NUP4016P5T5G electronic component of ON Semiconductor
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Part No.NUP4016P5T5G
Manufacturer: ON Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: TVS Diode Arrays LO CAP DIO-TVS ARRAY
Datasheet: NUP4016P5T5G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8000: USD 0.5084 ea
Line Total: USD 4067.2 
Availability - 0
MOQ: 8000  Multiples: 8000
Pack Size: 8000
Availability Price Quantity
0
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 8000
Multiples : 8000
8000 : USD 0.5084

   
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We are delighted to provide the NUP4016P5T5G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NUP4016P5T5G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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NUP4016P5T5G, SZNUP4016P5T5G Ultra-Low Capacitance Diode-TVS Array for High Speed Data Line Protection NUP4016P5T5G, SZNUP4016P5T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V (Note 1) 5.0 V RWM Breakdown Voltage V I = 1 mA, (Note 2) 5.5 V BR T Reverse Leakage Current I V = 5 V 1.0 A R RWM Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins and GND 0.5 0.8 pF J R Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins 0.3 0.5 pF J R 1. TVS devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater than the DC RWM or continuous peak operating voltage level. 2. V is measured at pulse test current I . BR T 3. Include SZ-prefix devices where applicable. TYPICAL PERFORMANCE CURVES (T = 25C unless otherwise noted) J Figure 1. ESD Clamping Voltage Screenshot (8 kV Contact per IEC61000042)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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