NUP4060AXV6 ESD Protection Diode Array, 4-Line This 4line surge protection array is designed for application requiring transient voltage protection capability. It is intended for use in overtransient voltage and ESD sensitive equipment such as cell www.onsemi.com phones, portables, computers, printers and other applications. This device features a common cathode design which protects four independent lines in a single SOT563 package. SOT563 4LINE SURGE PROTECTION Features Protects up to 4 Lines in a Single SOT563 Package PIN ASSIGNMENT ESD Rating: IEC6100042: Level 4 Contact (8 kV), Air (15 kV) D GND 1 1 6 V Pin = 16 V Protection CC D1, D2, and D3 Pins = 6.8 V Protection D 2 5 D 2 3 Low Capacitance (< 7 pF 3 V) for D , D , and D 1 2 3 V CC 3 4 GND This is a PbFree Device Applications MARKING Hand Held Portable Applications DIAGRAM USB Interface Notebooks, Desktops, Servers SOT563 6 MT M SIM Card Protection CASE 463A STYLE 6 1 1 MAXIMUM RATINGS (T = 25C, unless otherwise specified) J MT = Specific Device Code Symbol Rating Value Unit M = Date Code = PbFree Package P 1 Peak Power Dissipation V Diode 200 W PK CC (Note: Microdot may be in either location) 8x20 sec double exponential waveform, (Note 1) D , D , and D 20 W 1 2 3 ORDERING INFORMATION T Operating Junction Temperature Range 40 to 125 C J Device Package Shipping T Storage Temperature Range 55 to 150 C STG NUP4060AXV6T1G SOT563 4000/Tape & Reel T Lead Solder Temperature Maximum 260 C L (PbFree) (10 seconds) ESD IEC 6100042 Air 15000 V For information on tape and reel specifications, IEC 6100042 Contact 8000 including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Stresses exceeding those listed in the Maximum Ratings table may damage the Brochure, BRD8011/D. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 1. Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: October, 2017 Rev. 2 NUP4060/DNUP4060AXV6 ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise specified) J Parameter Conditions Symbol Min Typ Max Unit Reverse Working Voltage (D , D , and D ) (Note 2) V 5.0 V 1 2 3 RWM Breakdown Voltage (D , D , and D ) I = 1 mA, (Note 3) V 6.2 6.8 7.2 V 1 2 3 T BR Breakdown Voltage (V ) I = 5 mA, (Note 3) V 15.3 16 17.1 V CC T BR2 Reverse Leakage Current (D , D , and D ) V = 3 V I 0.01 0.5 A 1 2 3 RWM R Reverse Leakage Current (V ) V = 11 V I 0.05 A CC BR R Capacitance (D , D , and D ) V = 3 V, f = 1 MHz (Line to GND) C 7 10 pF 1 2 3 R J 2. Surge protection devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater RWM than the DC or continuous peak operating voltage level. 3. V is measured at pulse test current I . BR T www.onsemi.com 2