NUP3115UPMU ESD Protection Diode Low Capacitance ESD Protection for High Speed Data The threeline voltage transient suppressor array is designed to protect www.onsemi.com voltagesensitive components that require ultralow capacitance from ESD and transient voltage events. This device features a common anode design which protects three independent high speed data lines and a V CC D D D V 1 2 3 CC power line in a single sixlead UDFN low profile package. Excellent clamping capability, low capacitance, low leakage, and fast response time make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, it is suited for use in high frequency designs such as a USB 2.0 high speed. 6.8V 6.8V 6.8V 16V Features Low Capacitance 0.8 pF UDFN Package, 1.6 x 1.6 mm Low Profile of 0.50 mm for Ultra Slim Design MARKING Stand Off Voltage: 5.5 V DIAGRAM Low Leakage 1 UDFN6 1.6x1.6 Protects up to Three Data Lines Plus a V Pin CC 6 P3 M MU SUFFIX V Pin = 15 V Protection CC CASE 517AP 1 D , D , and D Pins = 6.4 V Minimum Protection 1 2 3 P3 = Specific Device Code IEC6100042: Level 4 ESD Protection M = Date Code This is a PbFree Device = PbFree Package (Note: Microdot may be in either location) Typical Applications USB 2.0 HighSpeed Interface Cell Phones PIN CONNECTIONS MP3 Players 6 V D 1 CC 1 SIM Card Protection GND 2 5 NC D 2 MAXIMUM RATINGS (T = 25C, unless otherwise specified) J 3 4 NC D 3 Symbol Rating Value Unit I Peak Pulse Current V Diode 5.0 A PK CC 8x20 sec double exponential waveform T Operating Junction Temperature Range 40 to 125 C ORDERING INFORMATION J T Storage Temperature Range 55 to 150 C STG Device Package Shipping T Lead Solder Temperature Maximum 260 C L NUP3115UPMUTAG UDFN6 3000/Tape & Reel (10 seconds) (PbFree) ESD IEC 6100042 Contact 8000 V For information on tape and reel specifications, Stresses exceeding those listed in the Maximum Ratings table may damage the including part orientation and tape sizes, please device. If any of these limits are exceeded, device functionality should not be refer to our Tape and Reel Packaging Specification assumed, damage may occur and reliability may be affected. Brochure, BRD8011/D. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: October, 2017 Rev. 3 NUP3115UPMU/DNUP3115UPMU ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM V V V C BR RWM V I Maximum Reverse Leakage Current V R RWM I V R F I T V Breakdown Voltage I BR T I Test Current T I Forward Current F V Forward Voltage I F F I PP P Peak Power Dissipation pk C Max. Capacitance V = 0 and f = 1.0 MHz R UniDirectional *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise specified) J Parameter Conditions Symbol Min Typ Max Unit Reverse Working Voltage (D , D , and D ) (Note 1) V 5.5 V 1 2 3 RWM1 Reverse Working Voltage (V ) (Note 1) V 12 V CC RWM2 Breakdown Voltage (D , D , and D ) I = 1 mA, (Note 2) V 6.0 6.8 8.0 V 1 2 3 T BR Breakdown Voltage (V ) I = 1 mA, (Note 2) V 15 16 16.8 V CC T BR2 Reverse Leakage Current (D , D , and D ) V I 1.0 A 1 2 3 RWM1 R Reverse Leakage Current (D , D , and D ) 3.3 V I 85 nA 1 2 3 R Reverse Leakage Current (V ) V I 1.0 A CC RWM2 R Clamping Voltage (D , D , and D ) I = 1 A V 9.4 V 1 2 3 PP C Clamping Voltage (V ) I = 1 A V 18.5 V CC PP C Clamping Voltage (V ) I = 3 A V 22 V CC PP C Junction Capacitance (D , D , and D ) V = 0 V, f = 1 MHz (Line to GND) C 0.8 1.0 pF 1 2 3 R J Clamping Voltage Per IEC 6100042 (Note 4) VC Figure 1 and 2 V 1. Surge protection devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater RWM than the DC or continuous peak operating voltage level. 2. V is measured at pulse test current I . BR T 3. Surge current waveform per Figure 5. 4. Typical waveform. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2