NUP4000DR2G ON Semiconductor

NUP4000 ESD Protection Diode Array Bidirectional ESD Protection for HighSpeed Data Line The NUP4000 surge protection is designed to protect equipment attached to up to four high speed communication lines from ESD, www.onsemi.com EFT, and lightning. Features: SO8 SO8 Package VOLTAGE SUPPRESSOR Peak Power 400 W 8 x 20 S 400 WATTS PEAK POWER ESD Rating: 15 VOLTS IEC 6100042 (ESD) 15 kV (air) 8 kV (contact) IEC 6100044 (EFT) 40 A (5/50 ns) IEC 6100045 (lightning) 12 A (8/20 s) PIN CONFIGURATION UL Flammability Rating of 94 V0 AND SCHEMATIC These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1 8 Compliant 2 7 Typical Applications: 3 6 High Speed Communication Line Protection 4 5 15 V Data and I/O Lines Microprocessor Based Equipment LAN/WAN Equipment 8 Servers 1 Notebook and Desktop PC Serial and Parallel Ports SO8 Peripherals CASE 751 MAXIMUM RATINGS MARKING DIAGRAM Rating Symbol Value Unit 8 Peak Power Dissipation P 400 W NUP40 pk 8 x 20 s T = 25C (Note 1) AYWW A Peak Pulse Current I 10 A PP 1 8 x 20 s T = 25C (Note 1) A A = Assembly Location Junction and Storage T , T 55 to C J stg Temperature Range +150 Y = Year WW = Work Week Lead Solder Temperature T 260 C L = PbFree Package Maximum 10 Seconds Duration (Note: Microdot may be in either location) 1. Nonrepetitive current pulse 8 x 20 S exponential decay waveform ORDERING INFORMATION Device Package Shipping NUP4000DR2G SO8 2500 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: October, 2017 Rev. 1 NUP4000/DNUP4000 ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Reverse Working Voltage V 15 V RWM Reverse Breakdown Voltage I = 1.0 mA V 16.7 V t BR Reverse Leakage Current V = 15 Volts I N/A 1.0 A RWM R Maximum Clamping Voltage I = 1.0 A, 8 x 20 S V N/A 24 V PP C Maximum Clamping Voltage I = 5.0 A, 8 x 20 S V N/A 30 V PP C Maximum Peak Pulse Current I 10 A PP Junction Capacitance V = 0 V, f = 1 MHz C 75 pF R J 1000 100 t PEAK VALUE I 8 s r RSM 90 PULSE WIDTH (t ) IS DEFINED P 80 AS THAT POINT WHERE THE 70 PEAK CURRENT DECAY = 8 s 100 60 HALF VALUE I /2 20 s RSM 50 40 10 30 t P 20 NOTE: NonRepetitive Surge. 10 1 0 1 10 100 1000 020 40 60 80 t, TIME ( s) t, TIME ( s) Figure 1. Pulse Width Figure 2. 8 20 s Pulse Waveform www.onsemi.com 2 P , PEAK SURGE POWER (WATTS) pk % OF PEAK PULSE CURRENT