NUP3105LT1G ON Semiconductor

NUP3105L, SZNUP3105L ESD Protection Diode Dual Line CAN Bus Protector The SZ/NUP3105L has been designed to protect the CAN transceiver in 24 V systems from ESD and other harmful transient voltage events. This device provides bidirectional protection for each www.onsemi.com data line with a single compact SOT23 package, giving the system designer a low cost option for improving system reliability and SOT23 meeting stringent EMI requirements. DUAL BIDIRECTIONAL VOLTAGE SUPPRESSOR Features 350 W PEAK POWER 350 W Peak Power Dissipation per Line (8/20 sec Waveform) Low Reverse Leakage Current (< 100 nA) Low Capacitance HighSpeed CAN Data Rates IEC Compatibility: IEC 6100042 (ESD): Level 4 IEC 6100044 (EFT): 50 A 5/50 ns SOT23 IEC 6100045 (Lighting) 8.0 A (8/20 s) CASE 318 Flammability Rating UL 94 V0 STYLE 27 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PIN 1 PPAP Capable PIN 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS PIN 2 Compliant CAN H Applications CAN Industrial Control Networks CAN Bus CAN L Transceiver Smart Distribution Systems (SDS ) DeviceNet NUP3105L Automotive Networks Low and HighSpeed CAN Fault Tolerant CAN Trucks MARKING DIAGRAM 27F M 1 27F = Device Code M = Date Code = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: October, 2017 Rev. 4 NUP3105L/DNUP3105L, SZNUP3105L MAXIMUM RATINGS (T = 25C, unless otherwise specified) J Symbol Rating Value Unit PPK Peak Power Dissipation W 8 x 20 s Double Exponential Waveform (Note 1) 350 T Operating Junction Temperature Range 55 to 150 C J T Storage Temperature Range 55 to 150 C J T Lead Solder Temperature (10 s) 260 C L ESD Human Body model (HBM) 8.0 kV Machine Model (MM) 400 V IEC 6100042 Specification (Contact) 30 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 1. ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise specified) J Symbol Parameter Test Conditions Min Typ Max Unit V Reverse Working Voltage (Note 2) 32 V RWM V Breakdown Voltage I = 1 mA (Note 3) 35.6 V BR T I Reverse Leakage Current V = 32 V 100 nA R RWM V Clamping Voltage 59 V I = 5 A (8/20 s Waveform) C PP (Note 4) V Clamping Voltage I = 8 A (8/20 s Waveform) 66 V C PP (Note 4) I Maximum Peak Pulse Current 8/20 s Waveform (Note 4) 8.0 A PP CJ Capacitance V = 0 V, f = 1 MHz (Line to GND) 30 pF R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Surge protection devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater RWM than the DC or continuous peak operating voltage level. 3. V is measured at pulse test current I . BR T 4. Pulse waveform per Figure 1. TYPICAL PERFORMANCE CURVES (T = 25C unless otherwise noted) J 12.0 110 WAVEFORM PULSE WAVEFORM 100 PARAMETERS 8 x 20 s per Figure 1 90 10.0 t = 8 s r 80 t = 20 s d ct 70 8.0 60 t = I /2 50 d PP 6.0 40 30 20 4.0 10 0 2.0 0 5 10 15 20 25 30 45 50 55 60 65 70 t, TIME ( s) V , CLAMPING VOLTAGE (V) C Figure 1. Pulse Waveform, 8/20 s Figure 2. Clamping Voltage vs Peak Pulse Current www.onsemi.com 2 % OF PEAK PULSE CURRENT I , PEAK PULSE CURRENT (A) PP