X-On Electronics has gained recognition as a prominent supplier of NUP3105LT1G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. NUP3105LT1G ESD Suppressors / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

NUP3105LT1G ON Semiconductor

NUP3105LT1G electronic component of ON Semiconductor
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Part No.NUP3105LT1G
Manufacturer: ON Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ON Semiconductor TVS Diode Arrays SOT-23 3 COMP CPR
Datasheet: NUP3105LT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1478 ea
Line Total: USD 443.4 
Availability - 40740
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
3404
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 9
Multiples : 1
9 : USD 0.555
13 : USD 0.3979
25 : USD 0.3942
100 : USD 0.2879
250 : USD 0.2829
500 : USD 0.221
1000 : USD 0.1803
3000 : USD 0.1656

40740
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1478

5514
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 5
Multiples : 5
5 : USD 0.3329
50 : USD 0.2674
150 : USD 0.2394
500 : USD 0.2042
3000 : USD 0.1887
6000 : USD 0.1794

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Vesd - Voltage ESD Contact
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Peak Surge Current
Brand
Mounting Style
Pd - Power Dissipation
Cnhts
Hts Code
Mxhts
Factory Pack Quantity :
Subcategory
Taric
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We are delighted to provide the NUP3105LT1G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NUP3105LT1G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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NUP3105L, SZNUP3105L ESD Protection Diode Dual Line CAN Bus Protector The SZ/NUP3105L has been designed to protect the CAN transceiver in 24 V systems from ESD and other harmful transient voltage events. This device provides bidirectional protection for each www.onsemi.com data line with a single compact SOT23 package, giving the system designer a low cost option for improving system reliability and SOT23 meeting stringent EMI requirements. DUAL BIDIRECTIONAL VOLTAGE SUPPRESSOR Features 350 W PEAK POWER 350 W Peak Power Dissipation per Line (8/20 sec Waveform) Low Reverse Leakage Current (< 100 nA) Low Capacitance HighSpeed CAN Data Rates IEC Compatibility: IEC 6100042 (ESD): Level 4 IEC 6100044 (EFT): 50 A 5/50 ns SOT23 IEC 6100045 (Lighting) 8.0 A (8/20 s) CASE 318 Flammability Rating UL 94 V0 STYLE 27 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PIN 1 PPAP Capable PIN 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS PIN 2 Compliant CAN H Applications CAN Industrial Control Networks CAN Bus CAN L Transceiver Smart Distribution Systems (SDS ) DeviceNet NUP3105L Automotive Networks Low and HighSpeed CAN Fault Tolerant CAN Trucks MARKING DIAGRAM 27F M 1 27F = Device Code M = Date Code = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: October, 2017 Rev. 4 NUP3105L/DNUP3105L, SZNUP3105L MAXIMUM RATINGS (T = 25C, unless otherwise specified) J Symbol Rating Value Unit PPK Peak Power Dissipation W 8 x 20 s Double Exponential Waveform (Note 1) 350 T Operating Junction Temperature Range 55 to 150 C J T Storage Temperature Range 55 to 150 C J T Lead Solder Temperature (10 s) 260 C L ESD Human Body model (HBM) 8.0 kV Machine Model (MM) 400 V IEC 6100042 Specification (Contact) 30 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 1. ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise specified) J Symbol Parameter Test Conditions Min Typ Max Unit V Reverse Working Voltage (Note 2) 32 V RWM V Breakdown Voltage I = 1 mA (Note 3) 35.6 V BR T I Reverse Leakage Current V = 32 V 100 nA R RWM V Clamping Voltage 59 V I = 5 A (8/20 s Waveform) C PP (Note 4) V Clamping Voltage I = 8 A (8/20 s Waveform) 66 V C PP (Note 4) I Maximum Peak Pulse Current 8/20 s Waveform (Note 4) 8.0 A PP CJ Capacitance V = 0 V, f = 1 MHz (Line to GND) 30 pF R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Surge protection devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater RWM than the DC or continuous peak operating voltage level. 3. V is measured at pulse test current I . BR T 4. Pulse waveform per Figure 1. TYPICAL PERFORMANCE CURVES (T = 25C unless otherwise noted) J 12.0 110 WAVEFORM PULSE WAVEFORM 100 PARAMETERS 8 x 20 s per Figure 1 90 10.0 t = 8 s r 80 t = 20 s d ct 70 8.0 60 t = I /2 50 d PP 6.0 40 30 20 4.0 10 0 2.0 0 5 10 15 20 25 30 45 50 55 60 65 70 t, TIME ( s) V , CLAMPING VOLTAGE (V) C Figure 1. Pulse Waveform, 8/20 s Figure 2. Clamping Voltage vs Peak Pulse Current www.onsemi.com 2 % OF PEAK PULSE CURRENT I , PEAK PULSE CURRENT (A) PP

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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