GMF05C-HSF www.vishay.com Vishay Semiconductors 5-Line ESD Protection Diode Array in LLP75-6L FEATURES Ultra compact LLP75-6L package 6 54 Low package profile < 0.6 mm 5-line ESD protection Surge immunity acc. IEC 61000-4-5 I > 12 A PPM Low leakage current I < 1 A R 2 1 3 ESD immunity acc. IEC 61000-4-2 19956 30 kV contact discharge 30 kV air discharge 20453 1 Working voltage range V = 5 V RWM MARKING (example only) e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn) Material categorization: for definitions of compliance XX please see www.vishay.com/doc 99912 YY 21001 Dot = pin 1 marking YY = type code (see table below) XX = date code click logo to get started DESIGN SUPPORT TOOLS Models Available ORDERING INFORMATION TAPED UNITS PER REEL DEVICE NAME ORDERING CODE MINIMUM ORDER QUANTITY (8 mm TAPE ON 7 REEL) GMF05C-HSF GMF05C-HSF-GS08 3000 15 000 PACKAGE DATA PACKAGE TYPE MOLDING COMPOUND MOISTURE DEVICE NAME WEIGHT SOLDERING CONDITIONS NAME CODE FLAMMABILITY RATING SENSITIVITY LEVEL MSL level 1 GMF05C-HSF LLP75-6L 1A 4.2 mg UL 94 V-0 Peak temperature max. 260 C (according J-STD-020) ABSOLUTE MAXIMUM RATINGS GMF05C-HSF PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT BiAs-mode: each input (pin 1 3 - pin 6) to ground (pin 2) Peak pulse current I 12 A PPM acc. IEC 61000-4-5 t = 8/20 s single shot p BiAs-mode: each input (pin 1 3 - pin 6) to ground (pin 2) Peak pulse power P 200 W PP acc. IEC 61000-4-5 t = 8/20 s single shot p Contact 30 kV BiAs-mode: each input (pin 1 3 - pin 6) discharge ESD immunity to ground (pin 2) V ESD Air acc. IEC 61000-4-2 10 pulses 30 kV discharge Operating temperature Junction temperature T -55 to +125 C J Storage temperature T -55 to +150 C STG Rev. 1.8, 04-Jan-2019 Document Number: 81731 1 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 GMF05C-HSF www.vishay.com Vishay Semiconductors BiAs-MODE (5-line bidirectional asymmetrical protection mode) With the GMF05C-HSF up to 5 signal- or data-lines (L1 to L5) can be protected against voltage transients. With pin 2 connected to ground and pin 1 3 up to pin 6 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (V ) the protectio n RWM diode between data line and ground offer a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The clamping voltage (V ) is defined by the breakthrough voltage (V ) level plus the voltage drop at the series impedance C BR (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low forward voltage (V ) clamps the negative transient close to the ground level. F Due to the different clamping levels in forward and reverse direction the GMF05C-HSF clamping behavior is bidirectional and asymmetrical (BiAs). L1 L5 1 5 L4 2 4 Ground L2 L3 3 3 BiAs 20739 ELECTRICAL CHARACTERISTICS GMF05C-HSF PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N - - 5 lines channel Reverse stand-off voltage Max. reverse working voltage V -- 5 V RWM Reverse voltage at I = 1 A V 5- - V R R Reverse current at V = V = 5 V I - < 0.1 1 A R RWM R Reverse breakdown voltage at I = 1 mA V 6- 8 V R BR at I = 12 A acc. IEC 61000-4-5 - - 12.5 V PP Reverse clamping voltage V C at I = 1 A acc. IEC 61000-4-5 - 7.8 9.5 V PP at I = 12 A acc. IEC 61000-4-5 -- 5.5 V F Forward clamping voltage V F at I = 1 A acc. IEC 61000-4-5 - 1.5 - V PP at V = 0 V f = 1 MHz - 126 150 pF R Capacitance C D at V = 2.5 V f = 1 MHz - 76 - pF R Note Ratings at 25 C, ambient temperature unless otherwise specified. BiAs mode: each input (pin 1 3 - pin 6) to ground (pin 2) If a higher surge current or peak pulse current (I ) is needed, some protection diodes in the GMF05C-HSF can also be used in PP parallel in order to multiply the performance. If two diodes are switched in parallel you get double surge power = double peak pulse current (2 x I ) PPM half of the line inductance = reduced clamping voltage half of the line resistance = reduced clamping voltage double line capacitance (2 x C ) D double reverse leakage current (2 x I ) R L1 L2 1 6 2 5 L3 3 4 Ground 20740 Rev. 1.8, 04-Jan-2019 Document Number: 81731 2 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000